Publications by authors named "Maxim P. Aarnts"

2 Publications

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Modeling of the viscoelastic behavior of dental light-activated resin composites during curing.

Dent Mater 2003 Jun;19(4):277-85

Department of Dental Materials Science, Academic Centre of Dentistry Amsterdam (ACTA), Louwesweg 1, NL-1066 EA, Amsterdam, The Netherlands.

Objective: Three models consisting of springs and dashpots were investigated to describe the viscoelastic behavior of a commercial light-activated restorative composite during curing.

Methods: Stress-strain data on Z100 were recorded by means of a dynamic test method performed on a universal testing machine. The model was tested by matching its response to experimental data and the material parameters, E (Young's modulus) and eta (viscosity), associated with the model were calculated.

Results: The universal testing machine generated reliable stress-strain data on the fast curing, light-activated resin composite during curing. The high polymerization rate of Z100 had a negative effect on the viscous flow capability of the material. A predictive model of the viscoelastic behavior of Z100 during curing was carried out, using the Maxwell model for the initial 3 min in the curing process and the Kelvin model for the remainder of the process.

Significance: Dental researchers analyzing shrinkage stress problems by mathematical modeling can obtain a good quantitative estimate of the shrinkage stress development of Z100 before the restoration is actually made.
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http://dx.doi.org/10.1016/s0109-5641(02)00041-6DOI Listing
June 2003

Bonding Properties of a Novel Inorganometallic Complex, Ru(SnPh(3))(2)(CO)(2)(iPr-DAB) (iPr-DAB = N,N'-Diisopropyl-1,4-diaza-1,3-butadiene), and its Stable Radical-Anion, Studied by UV-Vis, IR, and EPR Spectroscopy, (Spectro-) Electrochemistry, and Density Functional Calculations.

Inorg Chem 1996 Sep;35(19):5468-5477

Anorganisch Chemisch Laboratorium, J. H. van 't Hoff Research Institute, Universiteit van Amsterdam, Nieuwe Achtergracht 166, 1018 WV Amsterdam, The Netherlands, Amsterdam Institute for Molecular Studies, Universiteit van Amsterdam, Nieuwe Achtergracht 166, 1018 WV Amsterdam, The Netherlands, Afdeling Theoretische Chemie, Vrije Universiteit, De Boelelaan 1083, 1081 HV Amsterdam, The Netherlands, J. Heyrovský Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, Dolejskova 3, 182 23 Prague, Czech Republic.

Ru(SnPh(3))(2)(CO)(2)(iPr-DAB) was synthesized and characterized by UV-vis, IR, (1)H NMR, (13)C NMR, (119)Sn NMR, and mass (FAB(+)) spectroscopies and by single-crystal X-ray diffraction, which proved the presence of a nearly linear Sn-Ru-Sn unit. Crystals of Ru(SnPh(3))(2)(CO)(2)(iPr-DAB).3.5C(6)H(6) form in the triclinic space group P&onemacr; in a unit cell of dimensions a = 11.662(6) Å, b = 13.902(3) Å, c = 19.643(2) Å, alpha = 71.24(2) degrees, beta = 86.91(4) degrees, gamma = 77.89(3) degrees, and V = 2946(3) Å(3). One-electron reduction of Ru(SnPh(3))(2)(CO)(2)(iPr-DAB) produces the stable radical-anion [Ru(SnPh(3))(2)(CO)(2)(iPr-DAB)](*-) that was characterized by IR, and UV-vis spectroelectrochemistry. Its EPR spectrum shows a signal at g = 1.9960 with well resolved Sn, Ru, and iPr-DAB (H, N) hyperfine couplings. DFT-MO calculations on the model compound Ru(SnH(3))(2)(CO)(2)(H-DAB) reveal that the HOMO is mainly of sigma(Sn-Ru-Sn) character mixed strongly with the lowest pi orbital of the H-DAB ligand. The LUMO (SOMO in the reduced complex) should be viewed as predominantly pi(H-DAB) with an admixture of the sigma(Sn-Ru-Sn) orbital. Accordingly, the lowest-energy absorption band of the neutral species will mainly belong to the sigma(Sn-Ru-Sn)-->pi(iPr-DAB) charge transfer transition. The intrinsic strength of the Ru-Sn bond and the delocalized character of the three-center four-electron Sn-Ru-Sn sigma-bond account for the inherent stability of the radical anion.
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http://dx.doi.org/10.1021/ic960042hDOI Listing
September 1996
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