10 results match your criteria system lpcvd

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Effect of the SiCl₄ Flow Rate on SiBN Deposition Kinetics in SiCl₄-BCl₃-NH₃-H₂-Ar Environment.

Materials (Basel) 2017 Jun 7;10(6). Epub 2017 Jun 7.

Science and Technology on Thermostructural Composite Materials Laboratory, Northwestern Polytechnical University, Xi'an 710072, Shaanxi, China.

To improve the thermal and mechanical stability of SiC/SiC or C/SiC composites with SiBN interphase, SiBN coating was deposited by low pressure chemical vapor deposition (LPCVD) using SiCl₄-BCl₃-NH₃-H₂-Ar gas system. The effect of the SiCl₄ flow rate on deposition kinetics was investigated. Results show that deposition rate increases at first and then decreases with the increase of the SiCl₄ flow rate. Read More

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Silicon nanowire based biosensing platform for electrochemical sensing of Mebendazole drug activity on breast cancer cells.

Biosens Bioelectron 2016 Nov 9;85:363-370. Epub 2016 May 9.

Nano Electronic Center of Excellence, Nano Bio Electronic Devices Lab, School of Electrical and Computer Eng, University of Tehran, P.O. Box 14395/515, Tehran, Iran; Nano Electronic Center of Excellence, Thin Film and Nanoelectronic Lab, School of Electrical and Computer Eng, University of Tehran, P.O. Box 14395/515, Tehran, Iran. Electronic address:

Electrochemical approaches have played crucial roles in bio sensing because of their Potential in achieving sensitive, specific and low-cost detection of biomolecules and other bio evidences. Engineering the electrochemical sensing interface with nanomaterials tends to new generations of label-free biosensors with improved performances in terms of sensitive area and response signals. Here we applied Silicon Nanowire (SiNW) array electrodes (in an integrated architecture of working, counter and reference electrodes) grown by low pressure chemical vapor deposition (LPCVD) system with VLS procedure to electrochemically diagnose the presence of breast cancer cells as well as their response to anticancer drugs. Read More

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November 2016

Photocatalytic reaction characteristics of the titanium dioxide supported on the long phosphorescent phosphor by a low pressure chemical vapor deposition.

J Nanosci Nanotechnol 2014 Oct;14(10):7751-5

This study investigated the photocatalytic behavior of titanium dioxide (TiO2)-supported on the long phosphorescent materials. Nanocrystalline TiO2 was directly deposited on the plate of alkaline earth aluminate phosphor, CaAl2O4: Eu2+, Nd3+ by a low pressure chemical vapor deposition (LPCVD). Photocatalytic reaction performance was examined with the decomposition of benzene gas by using a gas chromatography (GC) system under ultraviolet and visible light (λ > 410 nm) irradiations. Read More

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October 2014

Improving the dielectric properties of an electrowetting-on-dielectric microfluidic device with a low-pressure chemical vapor deposited Si3N4 dielectric layer.

Biomicrofluidics 2015 Mar 23;9(2):022403. Epub 2015 Mar 23.

Institute of NanoEngineering and MicroSystems, National Tsing Hua University , Hsinchu 30013, Taiwan.

Dielectric breakdown is a common problem in a digital microfluidic system, which limits its application in chemical or biomedical applications. We propose a new fabrication of an electrowetting-on-dielectric (EWOD) device using Si3N4 deposited by low-pressure chemical vapor deposition (LPCVD) as a dielectric layer. This material exhibits a greater relative permittivity, purity, uniformity, and biocompatibility than polymeric films. Read More

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Field emission characteristics of regular arrays of carbon nanotubes.

J Nanosci Nanotechnol 2014 Jun;14(6):4714-7

The developments of electronic devices based on micron-sized vacuum electron sources during the last decades have triggered intense research on highly efficient carbon based thin film electron emitters. The synthesis of massive arrays of carbon nanotubes that are oriented on patterned Fe catalyst deposited on quartz substrates is reported. The well-ordered nanotubes can be used as electron field emission arrays. Read More

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Synthesis of wafer-scale hexagonal boron nitride monolayers free of aminoborane nanoparticles by chemical vapor deposition.

Nanotechnology 2014 Apr 14;25(14):145604. Epub 2014 Mar 14.

School of Integrated Technology, Yonsei University, Songdo-dong, Yeonsu-gu, Incheon 406-840, Korea. Yonsei Institute of Convergence Technology, Yonsei University, Songdo-dong, Yeonsu-gu, Incheon 406-840, Korea.

Hexagonal boron nitride (h-BN) has gained great attention as a two-dimensional material, along with graphene. In this work, high-quality h-BN monolayers were grown in wafer scale (7 × 7 cm(2)) on Cu substrates by using low-pressure chemical vapor deposition (LPCVD). We created h-BN monolayers that were free of polymeric aminoborane (BH2NH2) nanoparticles, which are undesirable by-products of the ammonia borane precursor, by employing a simple filtering system in the CVD process. Read More

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Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with Graphene-Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources.

Materials (Basel) 2013 Apr 16;6(4):1543-1553. Epub 2013 Apr 16.

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

We report a new method for growing hexagonal columnar nanograin structured silicon carbide (SiC) thin films on silicon substrates by using graphene-graphitic carbon nanoflakes (GGNs) templates from solid carbon sources. The growth was carried out in a conventional low pressure chemical vapor deposition system (LPCVD). The GGNs are small plates with lateral sizes of around 100 nm and overlap each other, and are made up of nanosized multilayer graphene and graphitic carbon matrix (GCM). Read More

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Rapid identification of stacking orientation in isotopically labeled chemical-vapor grown bilayer graphene by Raman spectroscopy.

Nano Lett 2013 Apr 15;13(4):1541-8. Epub 2013 Mar 15.

Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.

The growth of large-area bilayer graphene has been of technological importance for graphene electronics. The successful application of graphene bilayers critically relies on the precise control of the stacking orientation, which determines both electronic and vibrational properties of the bilayer system. Toward this goal, an effective characterization method is critically needed to allow researchers to easily distinguish the bilayer stacking orientation (i. Read More

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Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

J Nanosci Nanotechnol 2011 Sep;11(9):8237-41

NCSR "Demokritos", Institute of Microelectronics, POB 60228, 15310 Aghia Paraskevi, Greece.

In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Read More

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September 2011

Role of kinetic factors in chemical vapor deposition synthesis of uniform large area graphene using copper catalyst.

Nano Lett 2010 Oct;10(10):4128-33

Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.

In this article, the role of kinetics, in particular, the pressure of the reaction chamber in the chemical vapor deposition (CVD) synthesis of graphene using low carbon solid solubility catalysts (Cu), on both the large area thickness uniformity and the defect density are presented. Although the thermodynamics of the synthesis system remains the same, based on whether the process is performed at atmospheric pressure (AP), low pressure (LP) (0.1-1 Torr) or under ultrahigh vacuum (UHV) conditions, the kinetics of the growth phenomenon are different, leading to a variation in the uniformity of the resulting graphene growth over large areas (wafer scale). Read More

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October 2010
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