316 results match your criteria sic thin

Use of cleaved wedge geometry for plan-view transmission electron microscopy sample preparation.

Microsc Res Tech 2021 Jul 15. Epub 2021 Jul 15.

Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping, Sweden.

A fast, convenient, and easy to perform method for preparing plan-view transmission electron microscopy (TEM) specimens of brittle materials is proposed. The method is ideal for thin films/coatings and based on obtaining wedge-shape geometries of the samples via conventional cutting and cleaving followed by gentle focused ion beam (FIB) milling to electron transparency. It enables multiple parallel windows for depth sectioning of the samples and facilitates FIB lift-out procedure. Read More

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Piezoresistive Effect with a Gauge Factor of 18 000 in a Semiconductor Heterojunction Modulated by Bonded Light-Emitting Diodes.

ACS Appl Mater Interfaces 2021 Jul 8. Epub 2021 Jul 8.

Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia.

Giant piezoresistive effect enables the development of ultrasensitive sensing devices to address the increasing demands from hi-tech applications such as space exploration and self-driving cars. The discovery of the giant piezoresistive effect by optoelectronic coupling leads to a new strategy for enhancing the sensitivity of mechanical sensors, particularly with light from light-emitting diodes (LEDs). This paper reports on the piezoresistive effect in a 3C-SiC/Si heterostructure with a bonded LED that can reach a gauge factor (GF) as high as 18 000. Read More

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Studies of Defect Structure in Epitaxial AlN/GaN Films Grown on (111) 3C-SiC.

Nanomaterials (Basel) 2021 May 14;11(5). Epub 2021 May 14.

Extreme Light Infrastructure-Nuclear Physics (ELI-NP), "Horia Hulubei" National R&D Institute for Physics and Nuclear Engineering (IFIN-HH), 30 Reactorului Street, 077125 Măgurele, Romania.

Several aspects such as the growth relation between the layers of the GaN/AlN/SiC heterostructure, the consistency of the interfaces, and elemental diffusion are achieved by High Resolution Transmission Electron Microscopy (HR-TEM). In addition, the dislocation densities together with the defect correlation lengths are investigated via High-Resolution X-ray Diffraction (HR-XRD) and the characteristic positron diffusion length is achieved by Doppler Broadening Spectroscopy (DBS). Moreover, a comparative analysis with our previous work (i. Read More

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Surface treatments and its effects on the fatigue behavior of a 5% mol yttria partially stabilized zirconia material.

J Mech Behav Biomed Mater 2021 08 21;120:104543. Epub 2021 Apr 21.

Post-Graduate Program in Oral Science, Federal University of Santa Maria, Santa Maria, Rio Grande do Sul State, Brazil. Electronic address:

This study evaluated the effect of distinct surface treatments on the fatigue behavior (biaxial flexural fatigue testing) and surface characteristics (topography and roughness) of a 5% mol yttria partially stabilized zirconia ceramic (5Y-PSZ). Disc-shaped specimens of 5Y-PSZ (IPS e.max ZirCAD MT Multi) were manufactured (ISO 6872-2015) and allocated into six groups (n = 15) considering the following surface treatments: Ctrl - no-treatment; GLZ - low-fusing porcelain glaze application; SNF - 5 nm SiO nanofilm; AlOx - aluminum oxide particle air-abrasion; SiC - silica-coated aluminum oxide particles (silica-coating); and 7%Si - 7% silica-coated aluminum oxide particles (silica-coating). Read More

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Efficiency limitation of thin film coated planar semiconductor thermal neutron detector.

Appl Radiat Isot 2021 Jul 20;173:109716. Epub 2021 Apr 20.

Department of Physics, North Carolina A&T State University, Greensboro, NC, 27411, USA. Electronic address:

Semiconductor thermal neutron detectors are increasingly been used in in-core thermal neutron flux measurements in nuclear reactors. One limitation of these detectors is that they suffer from low detection efficiency. In this work, the maximum efficiency of a planar structure thermal neutron detector was determined using two widely used computer codes: Geant4 and MCNP6. Read More

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Effect of Mechanical Pretreatments on Damage Mechanisms and Fracture Toughness in CFRP/Epoxy Joints.

Materials (Basel) 2021 Mar 19;14(6). Epub 2021 Mar 19.

COHMAS Laboratory, Physical Sciences and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.

Adhesive bonding of carbon-fiber-reinforced polymers (CFRPs) is a key enabling technology for the assembly of lightweight structures. Surface pretreatment is necessary to remove contaminants related to material manufacturing and ensure bond reliability. The present experimental study focuses on the effect of mechanical abrasion on the damage mechanisms and fracture toughness of CFRP/epoxy joints. Read More

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On Relationships between Gas-Phase Chemistry and Reactive Ion Etching Kinetics for Silicon-Based Thin Films (SiC, SiO and SiN) in Multi-Component Fluorocarbon Gas Mixtures.

Materials (Basel) 2021 Mar 15;14(6). Epub 2021 Mar 15.

Department of Control and Instrumentation Engineering, Korea University, 2511 Sejong-ro, Sejong 30019, Korea.

This work summarizes the results of our previous studies related to investigations of reactive ion etching kinetics and mechanisms for widely used silicon-based materials (SiC, SiO, and SiN) as well as for the silicon itself in multi-component fluorocarbon gas mixtures. The main subjects were the three-component systems composed either by one fluorocarbon component (CF, CF, CHF) with Ar and O or by two fluorocarbon components with one additive gas. The investigation scheme included plasma diagnostics by Langmuir probes and model-based analysis of plasma chemistry and heterogeneous reaction kinetics. Read More

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Silicone encapsulation of thin-film SiO, SiONand SiC for modern electronic medical implants: a comparative long-term ageing study.

J Neural Eng 2021 Mar 22. Epub 2021 Mar 22.

Medical Physics & Biomedical Engineering, University College London, Malet Place Engineering Building, Gower Street, London, London, WC1E 6BT, UNITED KINGDOM OF GREAT BRITAIN AND NORTHERN IRELAND.

Objective: Ensuring the longevity of implantable devices is critical for their clinical usefulness. This is commonly achieved by hermetically sealing the sensitive electronics in a water impermeable housing, however, this method limits miniaturisation. Alternatively, silicone encapsulation has demonstrated long-term protection of implanted thick-film electronic devices. Read More

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Stress-induced deformation of the coating on large lightweight freeform optics.

Opt Express 2021 Feb;29(4):4755-4769

Large aperture, lightweight optics are frequently utilized in modern optical systems. However, despite the use of advanced techniques for developing their materials, fabrication, and mechanical structure, the coatings placed on the substrates induce slight lattice mismatches and increase the thin film stress on polished surfaces. This significantly distorts nano-accuracy optical surfaces, especially on lightweight freeform surfaces. Read More

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February 2021

Effects of Microwave-Assisted Heat Treatments on the Nanostructural Evolution of Amorphous Silicon Oxycarbide Thin Films.

J Nanosci Nanotechnol 2021 Sep;21(9):4797-4806

Department of Materials Science and Engineering, Inha University, 22212, Incheon, Republic of Korea.

This study investigated the effects of heat treatment on changes in the nanostructure of amorphous silicon oxycarbide thin films. Hydrogenated amorphous silicon oxycarbide (a-SiCO:H) thin films were prepared via plasma-enhanced chemical vapor deposition. The films were subjected to post-deposition heat treatments via microwave-assisted heating, which resulted in the formation of nanocrystals of SiC and Si in the a-SiCO:H matrix at temperatures as low as ~800 °C. Read More

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September 2021

Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD.

Materials (Basel) 2021 Feb 22;14(4). Epub 2021 Feb 22.

Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden.

The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta-organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1. Read More

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February 2021

Phase Identification and Ordered Vacancy Imaging in Epitaxial Metallic TaN Thin Films.

ACS Appl Mater Interfaces 2021 Mar 5;13(10):12575-12580. Epub 2021 Mar 5.

Materials Science and Technology Division, U.S. Naval Research Laboratory, Washington, District of Columbia 20375, United States.

Epitaxial transition metal nitrides (TMNs) are an emerging class of crystalline thin film metals that can be heteroepitaxially integrated with common group III-nitride semiconductors such as GaN and AlN. Within a binary family of TMN compounds (.. Read More

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High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications.

Nanomaterials (Basel) 2021 Feb 4;11(2). Epub 2021 Feb 4.

Research Institute of Electrical Communication, Tohoku University, Sendai, Miyagi 980-8577, Japan.

Graphene is promising for next-generation devices. However, one of the primary challenges in realizing these devices is the scalable growth of high-quality few-layer graphene (FLG) on device-type wafers; it is difficult to do so while balancing both quality and affordability. High-quality graphene is grown on expensive SiC bulk crystals, while graphene on SiC thin films grown on Si substrates (GOS) exhibits low quality but affordable cost. Read More

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February 2021

Highly Fast Response of Pd/TaO/SiC and Pd/TaO/Si Schottky Diode-Based Hydrogen Sensors.

Sensors (Basel) 2021 Feb 3;21(4). Epub 2021 Feb 3.

Department of Nanotechnology and Advanced Materials Engineering and HMC, Sejong University, Seoul 05006, Korea.

Herein, the fabrication of a novel highly sensitive and fast hydrogen (H) gas sensor, based on the TaO Schottky diode, is described. First, TaO thin films are deposited on silicon carbide (SiC) and silicon (Si) substrates via a radio frequency (RF) sputtering method. Then, Pd and Ni are respectively deposited on the front and back of the device. Read More

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February 2021

Influence of Gas Annealing on Sensitivity of AlN/4H-Sic-Based Temperature Sensors.

Materials (Basel) 2021 Feb 2;14(3). Epub 2021 Feb 2.

Department Electronic Materials Engineering, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Korea.

In this study, the physical and electrical characteristics of an AlN/4H-SiC Schottky barrier diode-based temperature sensor annealed in various gas atmospheres were investigated. An aluminum nitride (AlN) thin film was deposited on a 4H-SiC substrate via radio-frequency sputtering followed by annealing in N or O gas. The chemical composition of the film was determined by X-ray photoelectron spectroscopy (XPS) before and after annealing, and its electrical properties were evaluated by plotting a current-voltage (I-V) curve. Read More

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February 2021

Highly Selective Photocatalytic CO Reduction to CH by Ball-Milled Cubic Silicon Carbide Nanoparticles under Visible-Light Irradiation.

Hao Li Jianwu Sun

ACS Appl Mater Interfaces 2021 Feb 22;13(4):5073-5078. Epub 2021 Jan 22.

Department of Physics, Chemistry and Biology (IFM), Linköping University, 58183 Linköping, Sweden.

The ultimate goal of photocatalytic CO reduction is to achieve high selectivity for a single product with high efficiency. One of the most significant challenges is that expensive catalysts prepared through complex processes are usually used. Herein, gram-scale cubic silicon carbide (3C-SiC) nanoparticles are prepared through a top-down ball-milling approach from low-priced 3C-SiC powders. Read More

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February 2021

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics.

Micromachines (Basel) 2020 Dec 20;11(12). Epub 2020 Dec 20.

Center for Physical Sciences and Technology (FTMC), Saulėtekio 3, 10257 Vilnius, Lithuania.

We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN-SiC hybrid material was developed in order to improve thermal management and to reduce trapping effects. Fabricated Schottky barrier diodes (SBDs) demonstrated an ideality factor at approximately 1. Read More

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December 2020

Equivalent thin-plate method for stressed mirror polishing of an off-axis aspheric silicon carbide lightweight mirror.

Opt Express 2020 Nov;28(24):36413-36431

No physical model of stressed mirror polishing, based on the small deflection and deformation of elastic thin plates, has been applied in processing lightweight mirrors. We propose an equivalent thin-plate method for the stressed loading of lightweight mirrors for the first time. Stressed loading and polishing of an aspheric lightweight mirror are simulated using the small-deflection deformation theory of an elastic thin plate. Read More

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November 2020

Anomalous Properties of the Dislocation-Free Interface between Si(111) Substrate and 3C-SiC(111) Epitaxial Layer.

Materials (Basel) 2020 Dec 26;14(1). Epub 2020 Dec 26.

Institute for Problems in Mechanical Engineering of the Russian Academy of Sciences, 199178 Saint-Petersburg, Russia.

Thin films of single-crystal silicon carbide of cubic polytype with a thickness of 40-100 nm, which were grown from the silicon substrate material by the method of coordinated substitution of atoms by a chemical reaction of silicon with carbon monoxide CO gas, have been studied by spectral ellipsometry in the photon energy range of 0.5-9.3 eV. Read More

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December 2020

Lattice Defects and Exfoliation Efficiency of 6H-SiC via H Implantation at Elevated Temperature.

Materials (Basel) 2020 Dec 15;13(24). Epub 2020 Dec 15.

Institute of Modern Physics, Chinese Academy of Science, Lanzhou 730000, China.

Silicon carbide (SiC) is an important material used in semiconductor industries and nuclear power plants. SiC wafer implanted with H ions can be cleaved inside the damaged layer after annealing, in order to facilitate the transfer of a thin SiC slice to a handling wafer. This process is known as "ion-cut" or "Smart-Cut". Read More

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December 2020

Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond.

ACS Appl Mater Interfaces 2020 Nov 16. Epub 2020 Nov 16.

Centre for Device Thermography and Reliability, H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, U.K.

Integrating diamond with GaN high electron mobility transistors (HEMTs) improves thermal management, ultimately increasing the reliability and performance of high-power high-frequency radio frequency amplifiers. Conventionally, an amorphous interlayer is used before growing polycrystalline diamond onto GaN in these devices. This layer contributes significantly to the effective thermal boundary resistance (TBR) between the GaN HEMT and the diamond, reducing the benefit of the diamond heat spreader. Read More

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November 2020

Comprehensive study of the rapid stressed mirror polishing method for off-axis aspheric SiC thin-plate mirrors.

Opt Express 2020 Oct;28(22):32802-32818

In this study, the stressed mirror polishing technique is used to perform off-axis aspheric silicon carbide (SiC) mirror full-aperture polishing for the first time. Mechanical and optical parameter analysis methods have been proposed. A medium-diameter off-axis aspheric SiC thin-plate mirror is used as a scaling model for an optical system mirror. Read More

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October 2020

Synthesis and characterization of WS/graphene/SiC van der Waals heterostructures via WO thin film sulfurization.

Sci Rep 2020 Oct 15;10(1):17334. Epub 2020 Oct 15.

School of Chemistry and Physics, Queensland University of Technology (QUT), Brisbane, QLD, Australia.

Van der Waals heterostructures of monolayer transition metal dichalcogenides (TMDs) and graphene have attracted keen scientific interest due to the complementary properties of the materials, which have wide reaching technological applications. Direct growth of uniform, large area TMDs on graphene substrates by chemical vapor deposition (CVD) is limited by slow lateral growth rates, which result in a tendency for non-uniform multilayer growth. In this work, monolayer and few-layer WS was grown on epitaxial graphene on SiC by sulfurization of WO thin films deposited directly onto the substrate. Read More

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October 2020

An Automated System for Reactive Accelerated Aging of Implant Materials with In-Situ Testing.

Annu Int Conf IEEE Eng Med Biol Soc 2020 07;2020:4466-4469

The efficacy of implantable medical devices is limited by the longevity of devices in the body environment. Due to the aqueous and mobile-ion rich environment of tissue, robust and long-lasting encapsulation materials are critical for chronic implants. Assessing the reliability of medical devices is commonly performed through saline soak tests with reactive oxidative species at elevated temperatures and lifetime data are fit to an Arrhenius model to predict lifetime under physiological conditions. Read More

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Fabrication and Characterization of Oxygenated AlN/4H-SiC Heterojunction Diodes.

Materials (Basel) 2020 Sep 29;13(19). Epub 2020 Sep 29.

Department of Electronic Materials Engineering, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Korea.

The effects of rapid thermal annealing (RTA) on Schottky barrier diodes (SBDs) made from oxygenated aluminum nitride (AlN) thin films deposited on a silicon carbide (SiC) substrate using radio frequency sputtering were investigated. The annealed SBD devices exhibited a 10x increase in the on/off current ratio vs. non-annealed devices for measurement temperatures ranging from 300 K to 450 K. Read More

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September 2020

Thermal Transport across Ion-Cut Monocrystalline β-GaO Thin Films and Bonded β-GaO-SiC Interfaces.

ACS Appl Mater Interfaces 2020 Oct 24;12(40):44943-44951. Epub 2020 Sep 24.

George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.

The ultrawide band gap, high breakdown electric field, and large-area affordable substrates make β-GaO promising for applications of next-generation power electronics, while its thermal conductivity is at least 1 order of magnitude lower than other wide/ultrawide band gap semiconductors. To avoid the degradation of device performance and reliability induced by the localized Joule-heating, proper thermal management strategies are essential, especially for high-power high-frequency applications. This work reports a scalable thermal management strategy to heterogeneously integrate wafer-scale monocrystalline β-GaO thin films on high thermal conductivity SiC substrates by the ion-cutting technique and room-temperature surface-activated bonding technique. Read More

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October 2020

Dry Cold Forging of Pure Titanium Wire to Thin Plate with Use of β-SiC Coating Dies.

Materials (Basel) 2020 Aug 27;13(17). Epub 2020 Aug 27.

Faculty of Engineering, University of Toyama, Toyama 939-8202, Japan.

Dense β-SiC coating with 3C-structure was utilized as a dry cold forging punch and core-die. Pure titanium T328H wires of industrial grade II were employed as a work material. No adhesion or galling of metallic titanium was detected on the contact interface between this β-SiC die and titanium work, even after this continuous forging process, up to a reduction in thickness by 70%. Read More

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Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS.

Micromachines (Basel) 2020 Aug 24;11(9). Epub 2020 Aug 24.

Laboratório de Plasmas e Processos (LPP), Instituto Tecnológico de Aeronáutica (ITA), São José dos Campos SP 12228-900, Brazil.

A search of the recent literature reveals that there is a continuous growth of scientific publications on the development of chemical vapor deposition (CVD) processes for silicon carbide (SiC) films and their promising applications in micro- and nanoelectromechanical systems (MEMS/NEMS) devices. In recent years, considerable effort has been devoted to deposit high-quality SiC films on large areas enabling the low-cost fabrication methods of MEMS/NEMS sensors. The relatively high temperatures involved in CVD SiC growth are a drawback and studies have been made to develop low-temperature CVD processes. Read More

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Metallic glass coating for improving diamond dicing performance.

Sci Rep 2020 Jul 24;10(1):12432. Epub 2020 Jul 24.

Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan.

This is the first report on the coating of diamond dicing blades with metallic glass (MG) coating to reduce chipping when used to cut Si, SiC, sapphire, and patterned sapphire substrates (PSS). The low coefficient-of-friction (CoF) of Zr-based MG-coated dicing blades was shown to reduce the number and size of chips, regardless of the target substrate. Overall, SiC, sapphire and PSS were most affected by chipping, due to the fact that higher cutting forces were needed for the higher hardness of SiC, sapphire and PSS. Read More

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Stability of flexible thin-film metallization stimulation electrodes: analysis of explants after first-in-human study and improvement of in vivo performance.

J Neural Eng 2020 07 10;17(4):046006. Epub 2020 Jul 10.

Laboratory for Biomedical Microtechnology, Department of Microsystems Engineering - IMTEK, Albert-Ludwig-University Freiburg, Freiburg, Germany. Author to whom any correspondence should be addressed.

Objective: Micro-fabricated neural interfaces based on polyimide (PI) are achieving increasing importance in translational research. The ability to produce well-defined micro-structures with properties that include chemical inertness, mechanical flexibility and low water uptake are key advantages for these devices.

Approach: This paper reports the development of the transverse intrafascicular multichannel electrode (TIME) used to deliver intraneural sensory feedback to an upper-limb amputee in combination with a sensorized hand prosthesis. Read More

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