3 results match your criteria high-sensitivity negative-tone

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mr-EBL: ultra-high sensitivity negative-tone electron beam resist for highly selective silicon etching and large-scale direct patterning of permanent structures.

Nanotechnology 2021 Mar 11. Epub 2021 Mar 11.

Department of Electrical Engineering, Columbia University, New York, UNITED STATES.

Electron beam lithography (EBL) is the state-of-the-art technique for rapid prototyping of nanometer-scale devices. Even so, processing speeds remain limited for the highest resolution patterning. Here, we establish mr-EBL as the highest throughput negative tone electron-beam-sensitive resist. Read More

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Synthesis of triphenylsulfonium triflate bound copolymer for electron beam lithography.

J Nanosci Nanotechnol 2014 Aug;14(8):6270-3

Photoacid generator (PAG) has been widely used as a key component in photoresist for high-resolution patterning with high sensitivity. A novel acrylic monomer, triphenylsulfonium salt methyl methacrylate (TPSMA), was synthesized and includes triphenylsulfonium triflate as a PAG. The poly(MMA-co-TPSMA) (PMT) as a polymer-bound PAG was synthesized with methyl methacrylate (MMA) and TPSMA for electron beam lithography. Read More

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Nanoscopic cylindrical dual concentric and lengthwise block brush terpolymers as covalent preassembled high-resolution and high-sensitivity negative-tone photoresist materials.

J Am Chem Soc 2013 Mar 12;135(11):4203-6. Epub 2013 Mar 12.

Department of Chemistry, Texas A&M University, College Station, Texas 77842, USA.

We describe a high-resolution, high-sensitivity negative-tone photoresist technique that relies on bottom-up preassembly of differential polymer components within cylindrical polymer brush architectures that are designed to align vertically on a substrate and allow for top-down single-molecule line-width imaging. By applying cylindrical diblock brush terpolymers (DBTs) with a high degree of control over the synthetic chemistry, we achieved large areas of vertical alignment of the polymers within thin films without the need for supramolecular assembly processes, as required for linear block copolymer lithography. The specially designed chemical compositions and tuned concentric and lengthwise dimensions of the DBTs enabled high-sensitivity electron-beam lithography of patterns with widths of only a few DBTs (sub-30 nm line-width resolution). Read More

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