6,717 results match your criteria field transistors

Three-dimensional nanolithography guided by DNA modular epitaxy.

Nat Mater 2021 Apr 12. Epub 2021 Apr 12.

Wyss Institute for Biologically Inspired Engineering, Harvard University, Boston, MA, USA.

Lithographic scaling of periodic three-dimensional patterns is critical for advancing scalable nanomanufacturing. Current state-of-the-art quadruple patterning or extreme-ultraviolet lithography produce a line pitch down to around 30 nm, which might be further scaled to sub-20 nm through complex post-fabrication processes. Herein, we report the use of three-dimensional (3D) DNA nanostructures to scale the line pitch down to 16. Read More

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High mobility field-effect transistors based on MoS2 crystal grown by the flux method.

Nanotechnology 2021 Apr 12. Epub 2021 Apr 12.

School of Electronic and Electrical Engineering, Sungkyunkwan University, 300 Chun chun dong, Jangan - gu, Suwon-city 440-746, KOREA, Suwon, Korea (the Republic of).

Two-dimensional (2D) molybdenum disulphide (MoS2) transition metal chalcogenides (TMDs) have great potential in optical and electronic device applications; however, the performance of MoS2 is limited by its crystal quality, which serves as a measure of defects and grain boundaries in the grown material. Therefore, high-quality growth of MoS2 crystals continues to be a critical issue. In this context, we propose the formation of high-quality MoS2 crystals via flux method. Read More

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Low noise, high detectivity polarization sensitive room temperature infrared photodetectors based on Ge quantum dots decorated Si-on-insulator nanowire field effect transistors.

Nanotechnology 2021 Apr 12. Epub 2021 Apr 12.

Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur - 721 302, Kharagpur, INDIA.

A CMOS compatible infrared (1200 - 1700 nm) detector based on Ge-quantum dots decorated on single Si-nanowire channel on silicon-on-insulator (SOI) platform with a superior detectivity at room temperature is presented. The spectral response of a single nanowire device measured in aback gated field-effect transistor geometry displays a very high value of peak detectivity ~ 9.33 × 10Jones at ~1500 nm with a relatively low dark current (~ 20 pA), which are attributed to the fully depleted Si nanowire channel on SOI substrates. Read More

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2D MXene-Molecular Hybrid Additive for High-Performance Ambipolar Polymer Field-Effect Transistors and Logic Gates.

Adv Mater 2021 Apr 12:e2008215. Epub 2021 Apr 12.

Institut de Science et d'Ingénierie Supramoléculaires, University of Strasbourg & CNRS, 8 allée Gaspard Monge, Strasbourg, 67000, France.

MXenes are highly conductive layered materials that are attracting a great interest for high-performance opto-electronics, photonics, and energy applications.. Their non-covalent functionalization with ad hoc molecules enables the production of stable inks of 2D flakes to be processed in thin-films. Read More

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Highly In-Plane Anisotropic Two-Dimensional Ternary TaNiSe for Polarization-Sensitive Photodetectors.

ACS Appl Mater Interfaces 2021 Apr 9. Epub 2021 Apr 9.

Nanophotonics Research Center, Shenzhen Key Laboratory of Micro-Scale Optical Information Technology & Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China.

Intriguing anisotropic electrical and optoelectrical properties in two-dimensional (2D) materials are currently gaining increasing interest both for fundamental research and emerging optoelectronic devices. Identifying promising new 2D materials with low-symmetry structures will be rewarding in the development of polarization-integrated nanodevices. In this work, the anisotropic electron transport and optoelectrical properties of multilayer 2D ternary TaNiSe were systematically researched. Read More

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Diindenopyrazines: Electron-Deficient Arenes.

Chemistry 2021 Apr 8. Epub 2021 Apr 8.

Ruprecht Karls-Universität, Organisch-Chemisches Institut, Im Neuenheimer Feld 270, 69120, Heidelberg, GERMANY.

We report the syntheses, properties and application of air stable, electron acceptors, the diindenopyrazines 4a-g . We demonstrate introduction of functional aryl groups in 6,12-position. The targets are accessible on the hundred milligrams to the gram scale. Read More

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Intracellular action potential recordings from cardiomyocytes by ultrafast pulsed laser irradiation of fuzzy graphene microelectrodes.

Sci Adv 2021 Apr 7;7(15). Epub 2021 Apr 7.

Istituto Italiano di Tecnologia, Genova 16163, Italy.

Graphene with its unique electrical properties is a promising candidate for carbon-based biosensors such as microelectrodes and field effect transistors. Recently, graphene biosensors were successfully used for extracellular recording of action potentials in electrogenic cells; however, intracellular recordings remain beyond their current capabilities because of the lack of an efficient cell poration method. Here, we present a microelectrode platform consisting of out-of-plane grown three-dimensional fuzzy graphene (3DFG) that enables recording of intracellular cardiac action potentials with high signal-to-noise ratio. Read More

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Directly Patterning Conductive Polymer Electrodes on Organic Semiconductor via In Situ Polymerization in Microchannels for High-Performance Organic Transistors.

ACS Appl Mater Interfaces 2021 Apr 7. Epub 2021 Apr 7.

Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, 300072 Tianjin, China.

Conductive polymers are considered promising electrode materials for organic transistors, but the reported devices with conductive polymer electrodes generally suffer from considerable contact resistance. Currently, it is still highly challenging to pattern conductive polymer electrodes on organic semiconductor surfaces with good structure and interface quality. Herein, we develop an in situ polymerization strategy to directly pattern the top-contacted polypyrrole (PPy) electrodes on hydrophobic surfaces of organic semiconductors by microchannel templates, which is also applicable on diverse hydrophobic and hydrophilic surfaces. Read More

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1D Mixed-Stack Cocrystals Based on Perylene Diimide toward Ambipolar Charge Transport.

Small 2021 Apr 6:e2006574. Epub 2021 Apr 6.

Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Sciences Tianjin University, Collaborative Innovation Center of Chemical Science, and Engineering, Tianjin, 300072, China.

There is very limited repertoire of organic ambipolar semiconductors to date. Electron donor-acceptor alternative stacking is a unique and important binary motif for 1D mixed-stack cocrystals, opening up possibilities for the development of organic ambipolar semiconductors. Herein, four 1D mixed-stack cocrystals using N,N'-bis(perfluorobutyl)-1,7-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDICNF) as the acceptor and anthracene, pyrene, perylene, and meso-diphenyl tetrathia[22]annulene[2,1,2,1] (DPTTA) as the donors are achieved in a stoichiometric ratio (D:A = 1:1) through solution or vapor processed methods. Read More

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Discrimination of single-point mutations in unamplified genomic DNA via Cas9 immobilized on a graphene field-effect transistor.

Nat Biomed Eng 2021 Apr 5. Epub 2021 Apr 5.

Keck Graduate Institute, The Claremont Colleges, Claremont, CA, USA.

Simple and fast methods for the detection of target genes with single-nucleotide specificity could open up genetic research and diagnostics beyond laboratory settings. We recently reported a biosensor for the electronic detection of unamplified target genes using liquid-gated graphene field-effect transistors employing an RNA-guided catalytically deactivated CRISPR-associated protein 9 (Cas9) anchored to a graphene monolayer. Here, using unamplified genomic samples from patients and by measuring multiple types of electrical response, we show that the biosensors can discriminate within one hour between wild-type and homozygous mutant alleles differing by a single nucleotide. Read More

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Optimal field-effect transistor operation for high-resolution biochemical measurements.

Rev Sci Instrum 2021 Mar;92(3):030901

Biophysical and Biomedical Measurement Group, Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.

Field-effect transistors (FETs) are powerful tools for sensitive measurements of numerous biomarkers (e.g., proteins, nucleic acids, and antigen) and gaseous species. Read More

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CrI/YCH Heterointerface-Induced Stable Half-Metallicity of Two-Dimensional CrI Monolayer Ferromagnets.

ACS Appl Mater Interfaces 2021 Apr 5. Epub 2021 Apr 5.

Institute of Fundamental and Frontier Sciences & School of Mechanical and Electrical Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.

Two-dimensional (2D) CrI monolayer ferromagnets are key to the development of future miniature spintronic devices and modulating them into a half-metal will greatly expand the application scenarios of CrI in nanospintronics. Nevertheless, existing strategies to induce half-metallicity of a CrI monolayer remain experimentally challenging and have unstable issues. In this work, the introduction of a 2D electride [YC]·2e as an auxiliary layer is shown to be an effective way to achieve the generation of stable half-metallicity in the CrI monolayer. Read More

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ANTIGONE: A Programmable Energy-Efficient Current Digitizer for an ISFET Wearable Sweat Sensing System.

Sensors (Basel) 2021 Mar 16;21(6). Epub 2021 Mar 16.

École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.

This article describes the design and the characterization of the ANTIGONE (ANalog To dIGital cONvErter) ASIC (Application Specific Integrated Circuit) built in AMS 0.35 m technology for low dc-current sensing. This energy-efficient ASIC was specifically designed to interface with multiple Ion-Sensitive Field-Effect Transistors (ISFETs) and detect biomarkers like pH, Na+, K+ and Ca2+ in human sweat. Read More

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Hysteresis Behavior of the Donor-Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications.

Micromachines (Basel) 2021 Mar 12;12(3). Epub 2021 Mar 12.

School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Korea.

Donor-acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. Read More

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Analysis of Threshold Voltage Shift for Full V/V/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors.

Micromachines (Basel) 2021 Mar 19;12(3). Epub 2021 Mar 19.

The School of Electrical Engineering, Kookmin University, Seoul 02707, Korea.

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. Read More

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Interfacial Doping Effects in Fluoropolymer-Tungsten Diselenide Composites Providing High-Performance P-Type Transistors.

Polymers (Basel) 2021 Mar 30;13(7). Epub 2021 Mar 30.

Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Korea.

In this study, we investigated the p-doping effects of a fluoropolymer, Cytop, on tungsten diselenides (WSe). The hole current of the Cytop-WSe field-effect transistor (FET) was boosted by the C-F bonds of Cytop having a strong dipole moment, enabling increased hole accumulation. Analysis of the observed p-doping effects using atomic force microscopy (AFM) and Raman spectroscopy shed light on the doping mechanism. Read More

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Sensitivity, Noise and Resolution in a BEOL-Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications.

Sensors (Basel) 2021 Mar 4;21(5). Epub 2021 Mar 4.

DIEF, University of Modena and Reggio Emilia, 41125 Modena, Italy.

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power integrated sensors, very little is known about their noise characterization when being operated in a liquid gate configuration. The noise characteristics in various regimes of their operation are important to select the most suitable conditions for signal-to-noise ratio (SNR) and power consumption. Read More

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Effects of Counter Anions on AC and DC Electrical Conductivity in Poly(Dimethylsiloxane) Crosslinked by Metal-Ligand Coordination.

Polymers (Basel) 2021 Mar 20;13(6). Epub 2021 Mar 20.

Department of Molecular Physics, Faculty of Chemistry, Lodz University of Technology, Zeromskiego 116, 90-924 Lodz, Poland.

There is an urgent need for the development of elastic dielectric materials for flexible organic field effect transistors (OFETs). In this work, detailed analysis of the AC and DC electrical conductivity of a series of flexible poly(dimethylsiloxane) (PDMS) polymers crosslinked by metal-ligand coordination in comparison to neat PDMS was performed for the first time by means of broadband dielectric spectroscopy. The ligand was 2,2-bipyridine-4,4-dicarboxylic amide, and Ni, Mn, and Zn were introduced for Cl, Br, and I salts. Read More

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Effect of Buffer Layer Capacitance on the Electrical Characteristics of Ferroelectric Polymer Capacitors and Field Effect Transistors.

Materials (Basel) 2021 Mar 8;14(5). Epub 2021 Mar 8.

Department of Creative Convergence Engineering, Hanbat National University, Yuseong-gu, Daejeon 34158, Korea.

We demonstrated the effect of a buffer layer on the electrical characteristics of ferroelectric polymer capacitors and field-effect transistors. Various polymer materials with a dielectric constant between 2 and 42 were used to form buffer layers with a similar thicknesses, but with different capacitances. In order to evaluate the characteristics of the ferroelectrics with a buffer layer, the polarization-voltage characteristics of the capacitor, the transfer characteristics, and the retention characteristics of the transistors were investigated. Read More

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Label free detection of miRNA-21 with electrolyte gated organic field effect transistors (EGOFETs).

Biosens Bioelectron 2021 Mar 13;182:113144. Epub 2021 Mar 13.

Department of Life Sciences, Università, Degli Studi di Modena e Reggio Emilia, Via Campi 103, I-41125, Modena, Italy; Center for Translational Neurophysiology - Istituto Italiano di Tecnologia, Via Fossato di Mortara 17-19, I-44100, Ferrara, Italy.

We report a dual gate/common channel organic transistor architecture designed for quantifying the concentration of one of the strands of miRNA-21 in solution. The device allows one to measure the differential response between two gate electrodes, viz. one sensing and one reference, both immersed in the electrolyte above the transistor channel. Read More

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Nanotechnology: new opportunities for the development of patch-clamps.

J Nanobiotechnology 2021 Apr 1;19(1):97. Epub 2021 Apr 1.

State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing, 100085, China.

The patch-clamp technique is one of the best approaches to investigate neural excitability. Impressive improvements towards the automation of the patch-clamp technique have been made, but obvious limitations and hurdles still exist, such as parallelization, volume displacement in vivo, and long-term recording. Nanotechnologies have provided opportunities to overcome these hurdles by applying electrical devices on the nanoscale. Read More

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Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack.

ACS Appl Mater Interfaces 2021 Apr 1. Epub 2021 Apr 1.

Department of Electronic Engineering, Hanyang University, Seoul 04763, South Korea.

Ultrahigh-resolution displays for augmented reality (AR) and virtual reality (VR) applications require a novel architecture and process. Atomic-layer deposition (ALD) enables the facile fabrication of indium-gallium zinc oxide (IGZO) thin-film transistors (TFTs) on a substrate with a nonplanar surface due to its excellent step coverage and accurate thickness control. Here, we report all-ALD-derived TFTs using IGZO and HfO as the channel layer and gate insulator, respectively. Read More

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Enhanced Carrier Transport in Strongly Coupled, Epitaxially Fused CdSe Nanocrystal Solids.

Nano Lett 2021 Apr 1. Epub 2021 Apr 1.

Strongly coupled, epitaxially fused colloidal nanocrystal (NC) solids are promising solution-processable semiconductors to realize optoelectronic devices with high carrier mobilities. Here, we demonstrate sequential, solid-state cation exchange reactions to transform epitaxially connected PbSe NC thin films into CuSe nanostructured thin-film intermediates and then successfully to achieve zinc-blende, CdSe NC solids with wide epitaxial necking along {100} facets. Transient photoconductivity measurements probe carrier transport at nanometer length scales and show a photoconductance of 0. Read More

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Hydrosulfide-selective ChemFETs for aqueous HS/HS measurement.

Sens Biosensing Res 2021 Feb 29;31. Epub 2020 Dec 29.

Department of Chemistry and Biochemistry, Materials Science Institute, University of Oregon, Eugene, Oregon 97403, United States.

We have prepared and characterized hydrosulfide-selective ChemFET devices based on a nitrile butadiene rubber membrane containing tetraoctylammonium nitrate as a chemical recognition element that is applied to commercially available field-effect transistors. The sensors have fast (120 s) reversible responses, selectivity over other biologically relevant thiol-containing species, detection limits of 8 mM, and a detection range from approximately 5 to 500 mM. Sensitivities are shown to be 53 mV per decade at pH 8. Read More

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February 2021

High-Pressure O Annealing Enhances the Crystallinity of Ultrawide-Band-Gap Sesquioxides Combined with Graphene for Vacuum-Ultraviolet Photovoltaic Detection.

ACS Appl Mater Interfaces 2021 Mar 31. Epub 2021 Mar 31.

School of Materials, Sun Yat-sen University, Guangzhou, Guangdong 510275, China.

(AlGa)O is emerging as a promising wide-band-gap sesquioxide for vacuum-ultraviolet (VUV, 10-200 nm) photodetectors and high-power field-effect transistors. However, how the key parameters such as the band gap and crystalline phase of the (AlGa)O-based device vary with stoichiometry has not been explicitly defined, which is due to the unclear underlying mechanism of the Al local coordination environment. In this work, a high-pressure O (20 atm) annealing (HPOA) strategy that can significantly improve the crystallinity of β-(AlGa)O and achieve a tunable optical band gap was proposed, facilitating the revelation of the local structure of Al varying with Al content and the kinetic mechanism of Al diffusion. Read More

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Investigation of charge trapping mechanism in MoS2 field effect transistor by incorporating Al into host La2O3 as gate dielectric.

Nanotechnology 2021 Mar 29. Epub 2021 Mar 29.

Microelectronics Institute, Xidian University, xi'an, CHINA.

Charge trapping effect plays a key role in multibit memory devices and Brain-like neuron device. Herein, MoS2 field-effect transistors are fabricated with incorporating Al into host La2O3 as gate dielectric, and exhibit excellent electrical properties with an on-off ratio in memory window of ~106 and memory window ratio of ~40%. Furthermore, the charge trapping and de-trapping process were systematically studied, and the time constants are obtained from time domain characteristics. Read More

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