6 results match your criteria 2d Materials[Journal]

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Reversible Graphene decoupling by NaCl photo-dissociation.

2d Mater 2019 Apr 28;6(2). Epub 2019 Feb 28.

Materials Science Factory, Dept. Surfaces, Coatings and Molecular Astrophysics, Institute of Material Science of Madrid (ICMM-CSIC), C/Sor Juana Inés de la Cruz 3, 28049 Madrid, Spain.

We describe the reversible intercalation of Na under graphene on Ir(111) by photo-dissociation of a previously adsorbed NaCl overlayer. After room temperature evaporation, NaCl adsorbs on top of graphene forming a bilayer. With a combination of electron diffraction and photoemission techniques we demonstrate that the NaCl overlayer dissociates upon a short exposure to an X-ray beam. Read More

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http://dx.doi.org/10.1088/2053-1583/ab056eDOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6459370PMC

Large-area synthesis of high-quality monolayer 1T'-WTe flakes.

2d Mater 2017 Jun 1;4(2). Epub 2017 Feb 1.

Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104, United States of America.

Large-area growth of monolayer films of the transition metal dichalcogenides is of the utmost importance in this rapidly advancing research area. The mechanical exfoliation method offers high quality monolayer material but it is a problematic approach when applied to materials that are not air stable. One important example is 1T'-WTe, which in multilayer form is reported to possess a large non saturating magnetoresistance, pressure induced superconductivity, and a weak antilocalization effect, but electrical data for the monolayer is yet to be reported due to its rapid degradation in air. Read More

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http://dx.doi.org/10.1088/2053-1583/aa5921DOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5914533PMC
June 2017
13 Reads

Measuring the dielectric and optical response of millimeter-scale amorphous and hexagonal boron nitride films grown on epitaxial graphene.

2d Mater 2018 Jan 13;5(1). Epub 2017 Dec 13.

National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States.

Monolayer epitaxial graphene (EG), grown on the Si face of SiC, is an advantageous material for a variety of electronic and optical applications. EG forms as a single crystal over millimeter-scale areas and consequently, the large scale single crystal can be utilized as a template for growth of other materials. In this work, we present the use of EG as a template to form millimeter-scale amorphous and hexagonal boron nitride (-BN and -BN) films. Read More

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http://dx.doi.org/10.1088/2053-1583/aa9ea3DOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5846627PMC
January 2018
9 Reads

Trion Valley Coherence in Monolayer Semiconductors.

2d Mater 2017 Jun 22;4(2). Epub 2017 May 22.

Department of Physics and Center for Complex Quantum Systems, University of Texas at Austin, Austin, TX 78712, USA.

The emerging field of valleytronics aims to exploit the valley pseudospin of electrons residing near Bloch band extrema as an information carrier. Recent experiments demonstrating optical generation and manipulation of exciton valley coherence (the superposition of electron-hole pairs at opposite valleys) in monolayer transition metal dichalcogenides (TMDs) provide a critical step towards control of this quantum degree of freedom. The charged exciton (trion) in TMDs is an intriguing alternative to the neutral exciton for control of valley pseudospin because of its long spontaneous recombination lifetime, its robust valley polarization, and its coupling to residual electronic spin. Read More

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http://dx.doi.org/10.1088/2053-1583/aa70f9DOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5600293PMC
June 2017
7 Reads

Temperature dependence of electron density and electron-electron interactions in monolayer epitaxial graphene grown on SiC.

2d Mater 2017 Jun 25;4(2). Epub 2017 Jan 25.

Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan.

We report carrier density measurements and electron-electron (-) interactions in monolayer epitaxial graphene grown on SiC. The temperature ()-independent carrier density determined from the Shubnikov-de Haas (SdH) oscillations clearly demonstrates that the observed logarithmic temperature dependence of Hall slope in our system be due to - interactions. Since the electron density determined from conventional SdH measurements does not depend on - interactions based on Kohn's theorem, SdH experiments appear to be more reliable compared with the classical Hall effect when one studies the dependence of the carrier density in the low regime. Read More

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http://dx.doi.org/10.1088/2053-1583/aa55b9DOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5535274PMC
June 2017
11 Reads

Low Temperature Metal Free Growth of Graphene on Insulating Substrates by Plasma Assisted Chemical Vapor Deposition.

2d Mater 2017 Mar 3;4(1). Epub 2016 Nov 3.

Instituto de Ciencia de Materiales de Madrid, CSIC Madrid, 28049, Spain.

Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650°C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω·sq. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. Read More

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http://dx.doi.org/10.1088/2053-1583/4/1/015009DOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5214927PMC
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