GaAs Q-switched Nd:CNGG lasers: operating at F → I and F → I transitions.

Opt Express 2019 May;27(11):15426-15432

The nonlinear absorption properties of GaAs were measured at 1.06 and 1.34 µm by the open aperture Z-scan technique in this paper. Based on a neodymium doped calcium niobium gallium garnet (Nd:CNGG) disordered crystal grown by the Czochralski method, passively Q-switched lasers with the conventional GaAs wafer as the saturable absorber were demonstrated, operating on the transitions of F → I and F → I. For the F → I transition, the laser operated at 1063 nm with a pulse duration of 546 ns and a repetition rate of 98.5 kHz. While for the F → I transition operating at 1340 nm, the minimum pulse width was 499.6 ns with the pulse repetition rate of 110.7 kHz.

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http://dx.doi.org/10.1364/OE.27.015426DOI Listing
May 2019

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