Elastic properties and intrinsic strength of two-dimensional InSe flakes.

Authors:
Yuhao Li
Yuhao Li
The University of Sydney
Australia
Chuanbin Yu
Chuanbin Yu
Shenzhen Key Laboratory of Nanobiomechanics
Yingye Gan
Yingye Gan
Clemson University
Clemson | United States
Yangyang Kong
Yangyang Kong
Tianjin Key Laboratory of Radiation Medicine and Molecular Nuclear Medicine
Tianjin | China
Peng Jiang
Peng Jiang
School of Basic Medical Sciences
West Lafayette | United States
Penghui Li
Penghui Li
Hubei University
China
Xue-Feng Yu
Xue-Feng Yu
Wuhan University
China

Nanotechnology 2019 Apr 17;30(33):335703. Epub 2019 Apr 17.

State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics & Astronautics, Nanjing 210016, Jiangsu, People's Republic of China. Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, Guangdong, People's Republic of China.

The mechanical properties of two-dimensional (2D) materials are critical for their applications in functional devices as well as for strain engineering. Here, we report the Young's modulus and breaking strength of multilayered InSe, an emerging 2D semiconductor of the layered group III chalcogenide. Few-layer InSe flaks were exfoliated from bulk InSe crystal onto Si/SiO substrate with micro-fabricated holes, and indentation tests were carried out using an atomic force microscopy probe. In combination with both continuum analysis and finite element simulation, we measured the Young's modulus of multilayer 2D InSe (>5 L) to be 101.37 ± 17.93 GPa, much higher than its bulk counterpart, while its breaking strength is determined to be 8.68 GPa, approaching the theoretical limit of 10.1 GPa. Density functional theory calculations were also carried out to explain the insensitivity of Young's modulus to the layer count. It is found that 2D InSe is softer than most 2D materials, and exhibits breaking strength higher than that of carbon fiber, yet remaining more compliant, making it ideal for flexible electronics applications. The reliability of our method is also validated by measurement of graphene.

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Source
http://iopscience.iop.org/article/10.1088/1361-6528/ab1a96
Publisher Site
http://dx.doi.org/10.1088/1361-6528/ab1a96DOI Listing
April 2019
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