Dual Control of Phase change in multiferroics

David Edwards, Niall Browne, Kristina M Holsgrove, Aaron B Naden, Sayed O Sayedaghaee, Bin Xu, Sergey Prosandeev, Dawei Wang, Dipanjan Mazumdar, Martial Duchamp, Arunava Gupta, Sergei V Kalinin, Miryam Arredondo, Raymond G P McQuaid, Laurent Bellaiche, J Marty Gregg, Amit Kumar

Overview

We have demonstrated reversible dual control of ferroelectric phases by applying external stimuli which leads to achieving highly controllable system responses.

Summary

The dual control of ferroelectric phases provides opportunities in designing novel devices specifically memory and storage media.

Altmetric Statistics

Giant resistive switching in mixed phase BiFeOvia phase population control.

Authors:
Amit Kumar
Amit Kumar
Hohai University
Post doc Researcher
CLIMATE CHANGE, GHG
Nanjing, Jiangsu | China
sayedaghaee, Ph.D. Candidate in Microelectronics-Photonics
sayedaghaee, Ph.D. Candidate in Microelectronics-Photonics
University of Arkansas Fayetteville
Research Assistant
Computational Skills
Fayetteville, AR | United States

Nanoscale 2018 09;10(37):17629-17637

School of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK.

Highly-strained coherent interfaces, between rhombohedral-like (R) and tetragonal-like (T) phases in BiFeO3 thin films, often show enhanced electrical conductivity in comparison to non-interfacial regions. In principle, changing the population and distribution of these interfaces should therefore allow different resistance states to be created. However, doing this controllably has been challenging to date. Here, we show that local thin film phase microstructures (and hence R-T interface densities) can be changed in a thermodynamically predictable way (predictions made using atomistic simulations) by applying different combinations of mechanical stress and electric field. We use both pressure and electric field to reversibly generate metastable changes in microstructure that result in very large changes of resistance of up to 108%, comparable to those seen in Tunnelling Electro-Resistance (TER) devices.

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Source
http://xlink.rsc.org/?DOI=C8NR03653E
Publisher Site
http://dx.doi.org/10.1039/c8nr03653eDOI Listing
September 2018
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