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Flexible low-voltage polymer thin-film transistors using supercritical CO2-deposited ZrO2 dielectrics.

Authors:
Qingshuo Wei Eunyoung You Nicholas R Hendricks Alejandro L Briseno James J Watkins

ACS Appl Mater Interfaces 2012 May 1;4(5):2322-4. Epub 2012 May 1.

Department of Polymer Science and Engineering, University of Massachusetts Amherst, 120 Governors Drive, Amherst, Massachusetts 01003, USA.

The fabrication of low-voltage flexible organic thin film transistors using zirconia (ZrO(2)) dielectric layers prepared via supercritical fluid deposition was studied. Continuous, single-phase films of approximately 30 nm thick ZrO(2) were grown on polyimide (PI)/aluminum (Al) substrates at 250 °C via hydrolysis of tetrakis(2,2,6,6-tetramethyl-3,5-heptane-dionato) zirconium in supercritical carbon dioxide. This dielectric layer showed a high areal capacitance of 317 nF cm(-2) at 1 kHz and a low leakage current of 1.8 × 10(-6) A cm(-2) at an applied voltage of -3 V. By using poly(3-hexylthiophene) (P3HT) as a semiconductor, we have fabricated flexible thin film transistors operating at V(DS) = -0.5 V and V(G) in a range from 0.5 V to -4 V, with on/off ratios on the order of 1 × 10(3) and mobility values higher than 0.1 cm(2)/(V s).

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http://dx.doi.org/10.1021/am300371dDOI Listing
May 2012

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