Immobilization of enzyme and antibody on ALD-HfO2-EIS structure by NH3 plasma treatment.

Nanoscale Res Lett 2012 Mar 8;7:179. Epub 2012 Mar 8.

Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, 333, Taiwan.

Thin hafnium oxide layers deposited by an atomic layer deposition system were investigated as the sensing membrane of the electrolyte-insulator-semiconductor structure. Moreover, a post-remote NH3 plasma treatment was proposed to replace the complicated silanization procedure for enzyme immobilization. Compared to conventional methods using chemical procedures, remote NH3 plasma treatment reduces the processing steps and time. The results exhibited that urea and antigen can be successfully detected, which indicated that the immobilization process is correct.

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http://dx.doi.org/10.1186/1556-276X-7-179DOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC3329401PMC
March 2012
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