Shadi A Dayeh

Shadi A Dayeh

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Shadi A Dayeh

Shadi A Dayeh

Publications by authors named "Shadi A Dayeh"

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Monolithic and Scalable Au Nanorod Substrates Improve PEDOT-Metal Adhesion and Stability in Neural Electrodes.

Adv Healthc Mater 2018 11 23;7(22):e1800923. Epub 2018 Oct 23.

Integrated Electronics and Biointerfaces Laboratory, Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA, 92093, USA.

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http://doi.wiley.com/10.1002/adhm.201800923
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http://dx.doi.org/10.1002/adhm.201800923DOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6387627PMC
November 2018

Sub-millimeter ECoG pitch in human enables higher fidelity cognitive neural state estimation.

Neuroimage 2018 08 18;176:454-464. Epub 2018 Apr 18.

Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92093, USA. Electronic address:

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http://dx.doi.org/10.1016/j.neuroimage.2018.04.027DOI Listing
August 2018

Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si.

Adv Mater 2017 Oct 21;29(38). Epub 2017 Aug 21.

Materials Science and Engineering Program, University of California San Diego, La Jolla, CA, 92093, USA.

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http://dx.doi.org/10.1002/adma.201702557DOI Listing
October 2017

Recordings and Analysis of Atomic Ledge and Dislocation Movements in InGaAs to Nickelide Nanowire Phase Transformation.

Small 2017 08 8;13(30). Epub 2017 Jun 8.

Department of Electrical and Computer Engineering, Materials Science and Engineering Program, Department of NanoEngineering, University of California San Diego, La Jolla, CA, 92093, USA.

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http://dx.doi.org/10.1002/smll.201604117DOI Listing
August 2017

GaP/GaNP Heterojunctions for Efficient Solar-Driven Water Oxidation.

Small 2017 06 31;13(21). Epub 2017 Mar 31.

Materials Science and Engineering Program, University of California-San Diego, La Jolla, CA, 92093, USA.

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http://dx.doi.org/10.1002/smll.201603574DOI Listing
June 2017

Atomic Scale Dynamics of Contact Formation in the Cross-Section of InGaAs Nanowire Channels.

Nano Lett 2017 04 28;17(4):2189-2196. Epub 2017 Mar 28.

Center for Integrated Nanotechnologies, Sandia National Laboratories , Albuquerque, New Mexico 87185, United States.

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http://dx.doi.org/10.1021/acs.nanolett.6b04713DOI Listing
April 2017

Autoclave Sterilization of PEDOT:PSS Electrophysiology Devices.

Adv Healthc Mater 2016 12 25;5(24):3094-3098. Epub 2016 Nov 25.

Department of Bioelectronics, Ecole Nationale Supérieure des Mines, CMP-EMSE, MOC, 13541, Gardanne, France.

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http://dx.doi.org/10.1002/adhm.201600870DOI Listing
December 2016

Gibbs-Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth.

Nano Lett 2016 07 6;16(7):4158-65. Epub 2016 Jun 6.

Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST) , Thuwal 23955, Saudi Arabia.

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http://dx.doi.org/10.1021/acs.nanolett.6b01037DOI Listing
July 2016

Engineering Heteromaterials to Control Lithium Ion Transport Pathways.

Sci Rep 2015 Dec 21;5:18482. Epub 2015 Dec 21.

Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, California 92093, USA.

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http://dx.doi.org/10.1038/srep18482DOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4685276PMC
December 2015

Facet-Selective Nucleation and Conformal Epitaxy of Ge Shells on Si Nanowires.

Nano Lett 2015 Nov 13;15(11):7258-64. Epub 2015 Oct 13.

Center for Integrated Nanotechnologies, Los Alamos National Laboratory , Los Alamos, New Mexico 87545, United States.

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http://dx.doi.org/10.1021/acs.nanolett.5b02313DOI Listing
November 2015

Strong Geometrical Effects in Submillimeter Selective Area Growth and Light Extraction of GaN Light Emitting Diodes on Sapphire.

Sci Rep 2015 Nov 27;5:17314. Epub 2015 Nov 27.

Materials Science Program, University of California San Diego, La Jolla CA, 92093, USA.

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http://dx.doi.org/10.1038/srep17314DOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4661445PMC
November 2015

Size and Orientation Effects on the Kinetics and Structure of Nickelide Contacts to InGaAs Fin Structures.

Nano Lett 2015 Jun 11;15(6):3770-9. Epub 2015 May 11.

†Department of Electrical and Computer Engineering and ‡Materials Science and Engineering Program, University of California San Diego, La Jolla, California 92093, United States.

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http://dx.doi.org/10.1021/acs.nanolett.5b00327DOI Listing
June 2015

Si Radial p-i-n Junction Photovoltaic Arrays with Built-In Light Concentrators.

ACS Nano 2015 May 13;9(5):5154-63. Epub 2015 May 13.

†Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States.

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http://dx.doi.org/10.1021/acsnano.5b00500DOI Listing
May 2015

Atomic scale analysis of the enhanced electro- and photo-catalytic activity in high-index faceted porous NiO nanowires.

Sci Rep 2015 Feb 24;5:8557. Epub 2015 Feb 24.

1] Department of Materials Science &Engineering, CAS key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui, 230026, China [2] Synergetic Innovation Center of Quantum Information &Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.

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http://dx.doi.org/10.1038/srep08557DOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4338422PMC
February 2015

Size-dependent silicon epitaxy at mesoscale dimensions.

Nano Lett 2014 Nov 16;14(11):6121-6. Epub 2014 Oct 16.

Center for Integrated Nanotechnologies, Los Alamos National Laboratory , Los Alamos, New Mexico 87545, United States.

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http://dx.doi.org/10.1021/nl502085zDOI Listing
November 2014

Gold catalyzed nickel disilicide formation: a new solid-liquid-solid phase growth mechanism.

Nano Lett 2013 2;13(12):6009-15. Epub 2013 Dec 2.

Department of Materials Science and Engineering, University of California, Los Angeles , Los Angeles, California 90024, United States.

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http://dx.doi.org/10.1021/nl4032023DOI Listing
September 2014

Optical properties of metal-molybdenum disulfide hybrid nanosheets and their application for enhanced photocatalytic hydrogen evolution.

ACS Nano 2014 Jul 9;8(7):6979-85. Epub 2014 Jun 9.

Department of Materials Science & Engineering, CAS key Lab of Materials for Energy Conversion, University of Science and Technology of China , Hefei, Anhui 230026, P. R. China.

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http://dx.doi.org/10.1021/nn501807yDOI Listing
July 2014

Lattice strain effects on the optical properties of MoS2 nanosheets.

Sci Rep 2014 Jul 10;4:5649. Epub 2014 Jul 10.

Department of Materials Science & Engineering, CAS key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui, 230026, China.

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http://dx.doi.org/10.1038/srep05649DOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4090623PMC
July 2014

Diameter-independent hole mobility in Ge/Si core/shell nanowire field effect transistors.

Nano Lett 2014 Feb 6;14(2):585-91. Epub 2014 Jan 6.

Center for Integrated Nanotechnologies, Los Alamos National Laboratory , Los Alamos, New Mexico 87545, United States.

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http://dx.doi.org/10.1021/nl4037559DOI Listing
February 2014

Tailoring lithiation behavior by interface and bandgap engineering at the nanoscale.

Nano Lett 2013 Oct 5;13(10):4876-83. Epub 2013 Sep 5.

Center for Integrated Nanotechnologies, Sandia National Laboratories , Albuquerque, New Mexico 87185, United States.

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http://dx.doi.org/10.1021/nl4027549DOI Listing
October 2013

Origin of polytype formation in VLS-grown Ge nanowires through defect generation and nanowire kinking.

Nano Lett 2013 Aug 2;13(8):3947-52. Epub 2013 Aug 2.

Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.

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http://dx.doi.org/10.1021/nl402117bDOI Listing
August 2013

Nucleation and atomic layer reaction in nickel silicide for defect-engineered Si nanochannels.

Nano Lett 2013 Jun 3;13(6):2748-53. Epub 2013 Jun 3.

Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90024, USA.

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http://dx.doi.org/10.1021/nl400949nDOI Listing
June 2013

Direct measurement of coherency limits for strain relaxation in heteroepitaxial core/shell nanowires.

Nano Lett 2013 May 15;13(5):1869-76. Epub 2012 Oct 15.

Center for Integrated Nanotechnologies, Los Alamos National Laboratory, P.O. Box 1663, K771 Los Alamos, New Mexico 87545, USA.

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http://dx.doi.org/10.1021/nl3022434DOI Listing
May 2013

Adaptable silicon-carbon nanocables sandwiched between reduced graphene oxide sheets as lithium ion battery anodes.

ACS Nano 2013 Feb 8;7(2):1437-45. Epub 2013 Jan 8.

National Center for Nanoscience and Technology, Beijing 100190, P. R. China.

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http://dx.doi.org/10.1021/nn3052023DOI Listing
February 2013

Electrical spin injection and detection in silicon nanowires through oxide tunnel barriers.

Nano Lett 2013 Feb 22;13(2):430-5. Epub 2013 Jan 22.

Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.

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http://drl.ee.ucla.edu/wp-content/uploads/2014/12/JUST-ACCEP
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http://pubs.acs.org/doi/abs/10.1021/nl303667v
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http://dx.doi.org/10.1021/nl303667vDOI Listing
February 2013

In situ atomic-scale imaging of electrochemical lithiation in silicon.

Nat Nanotechnol 2012 Nov 7;7(11):749-56. Epub 2012 Oct 7.

Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA.

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http://dx.doi.org/10.1038/nnano.2012.170DOI Listing
November 2012

Axial SiGe heteronanowire tunneling field-effect transistors.

Nano Lett 2012 Nov 31;12(11):5850-5. Epub 2012 Oct 31.

Department of Physics and School of Engineering, Brown University, Providence, Rhode Island 02912, USA.

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http://dx.doi.org/10.1021/nl3032058DOI Listing
November 2012

Ultrashort channel silicon nanowire transistors with nickel silicide source/drain contacts.

Nano Lett 2012 Aug 13;12(8):3979-85. Epub 2012 Jul 13.

Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90024, USA.

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http://dx.doi.org/10.1021/nl3011676DOI Listing
August 2012

Tailoring the vapor-liquid-solid growth toward the self-assembly of GaAs nanowire junctions.

Nano Lett 2011 Nov 10;11(11):4947-52. Epub 2011 Oct 10.

Division of Physics and Applied Physics, 21 Nanyang Link, Nanyang Technological University, Singapore.

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http://dx.doi.org/10.1021/nl202888eDOI Listing
November 2011

Growth, defect formation, and morphology control of germanium-silicon semiconductor nanowire heterostructures.

Nano Lett 2011 Oct 31;11(10):4200-6. Epub 2011 Aug 31.

Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico, United States.

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http://dx.doi.org/10.1021/nl202126qDOI Listing
October 2011

Ultrafast electrochemical lithiation of individual Si nanowire anodes.

Nano Lett 2011 Jun 12;11(6):2251-8. Epub 2011 May 12.

Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.

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http://dx.doi.org/10.1021/nl200412pDOI Listing
June 2011

Direct observation of nanoscale size effects in Ge semiconductor nanowire growth.

Nano Lett 2010 Oct;10(10):4032-9

Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.

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http://pubs.acs.org/doi/abs/10.1021/nl1019722
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http://dx.doi.org/10.1021/nl1019722DOI Listing
October 2010

Epitaxy of Ge nanowires grown from biotemplated Au nanoparticle catalysts.

ACS Nano 2010 Feb;4(2):1209-17

Department of Chemistry and Chemical Biology, Cornell University, Ithaca, NY 14853, USA.

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http://dx.doi.org/10.1021/nn901664rDOI Listing
February 2010

Precise semiconductor nanowire placement through dielectrophoresis.

Nano Lett 2009 Jun;9(6):2260-6

Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093, USA.

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https://pubs.acs.org/doi/10.1021/nl900423g
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http://dx.doi.org/10.1021/nl900423gDOI Listing
June 2009

Surface diffusion and substrate-nanowire adatom exchange in InAs nanowire growth.

Nano Lett 2009 May;9(5):1967-72

Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407, USA.

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http://pubs.acs.org/doi/abs/10.1021/nl900191w
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http://dx.doi.org/10.1021/nl900191wDOI Listing
May 2009

Transport coefficients of InAs nanowires as a function of diameter.

Small 2009 Jan;5(1):77-81

Department of Electrical and Computer Engineering, University of California-San Diego, La Jolla, CA 92093, USA.

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http://dx.doi.org/10.1002/smll.200800969DOI Listing
January 2009

Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition.

Nano Lett 2008 Nov 28;8(11):3755-60. Epub 2008 Oct 28.

Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, California 92093-0407, USA.

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http://dx.doi.org/10.1021/nl802062yDOI Listing
November 2008

Field dependent transport properties in InAs nanowire field effect transistors.

Nano Lett 2008 Oct 11;8(10):3114-9. Epub 2008 Sep 11.

Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, California 92093, USA.

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http://dx.doi.org/10.1021/nl801256pDOI Listing
October 2008

Excess indium and substrate effects on the growth of InAs nanowires.

Small 2007 Oct;3(10):1683-7

Department of Electrical and Computer Engineering, University of California San Diego, 9500 Gilman Dr., La Jolla, CA 92093, USA.

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http://doi.wiley.com/10.1002/smll.200700338
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http://dx.doi.org/10.1002/smll.200700338DOI Listing
October 2007

III-V nanowire growth mechanism: V/III ratio and temperature effects.

Nano Lett 2007 Aug 4;7(8):2486-90. Epub 2007 Jul 4.

Department of Electrical and Computer Engineering, University of California-San Diego, La Jolla, California 92093, USA.

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http://dx.doi.org/10.1021/nl0712668DOI Listing
August 2007

High electron mobility InAs nanowire field-effect transistors.

Small 2007 Feb;3(2):326-32

Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407, USA.

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http://doi.wiley.com/10.1002/smll.200600379
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http://dx.doi.org/10.1002/smll.200600379DOI Listing
February 2007

Rational synthesis of p-type zinc oxide nanowire arrays using simple chemical vapor deposition.

Nano Lett 2007 Feb;7(2):323-8

Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407, USA.

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http://dx.doi.org/10.1021/nl062410cDOI Listing
February 2007