Publications by authors named "Renato Negra"

3 Publications

  • Page 1 of 1

Thickness-modulated lateral MoS diodes with sub-terahertz cutoff frequency.

Nanoscale 2021 May;13(19):8940-8947

School of Engineering Science, Simon Fraser University, 8888 University Drive, Burnaby, British Columbia V5A 1S6, Canada.

Thickness-modulated lateral MoS2 diodes with an extracted benchmark cutoff frequency (fc) of up to 126 GHz are implemented and fully characterised. Fabricated diodes demonstrate an on-off current ratio of more than 600 and a short circuit current responsivity at zero-bias of 7 A/W. The excellent performance achieved in our device is attributed to reduced contact resistance from using In/Au contacts and low junction capacitance due to the lateral device structure. In addition, the use of multilayer MoS2 crystals enabled relatively high current flow. Small- and large-signal models are extracted from DC and RF characterisation of the fabricated diode prototype. Extracted compact models are compared to the measured DC and S-parameters of the diode, demonstrating excellent matching between models and measurements. The presented diode is suitable for switching circuits and high frequency applications.
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http://dx.doi.org/10.1039/d1nr00089fDOI Listing
May 2021

Graphene integrated circuits: new prospects towards receiver realisation.

Nanoscale 2017 Dec;10(1):93-99

Chair of High Frequency Electronics, Faculty of Electrical Engineering and Information Technology, RWTH-Aachen University, Kopernikusstr. 16, 52074 Aachen, Germany.

This work demonstrates a design approach which enables the fabrication of fully integrated radio frequency (RF) and millimetre-wave frequency direct-conversion graphene receivers by adapting the frontend architecture to exploit the state-of-the-art performance of the recently reported wafer-scale CVD metal-insulator-graphene (MIG) diodes. As a proof-of-concept, we built a fully integrated microwave receiver in the frequency range 2.1-2.7 GHz employing the strong nonlinearity and the high responsivity of MIG diodes to successfully receive and demodulate complex, digitally modulated communication signals at 2.45 GHz. In addition, the fabricated receiver uses zero-biased MIG diodes and consumes zero dc power. With the flexibility to be fabricated on different substrates, the prototype receiver frontend is fabricated on a low-cost, glass substrate utilising a custom-developed MMIC process backend which enables the high performance of passive components. The measured performance of the prototype makes it suitable for Internet-of-Things (IoT) and Radio Frequency Identification (RFID) systems for medical and communication applications.
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http://dx.doi.org/10.1039/c7nr06871aDOI Listing
December 2017

High performance metal-insulator-graphene diodes for radio frequency power detection application.

Nanoscale 2017 Aug;9(33):11944-11950

Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany.

Vertical metal-insulator-graphene (MIG) diodes for radio frequency (RF) power detection are realized using a scalable approach based on graphene grown by chemical vapor deposition and TiO as barrier material. The temperature dependent current flow through the diode can be described by thermionic emission theory taking into account a bias induced barrier lowering at the graphene TiO interface. The diodes show excellent figures of merit for static operation, including high on-current density of up to 28 A cm, high asymmetry of up to 520, strong maximum nonlinearity of up to 15, and large maximum responsivity of up to 26 V, outperforming state-of-the-art metal-insulator-metal and MIG diodes. RF power detection based on MIG diodes is demonstrated, showing a responsivity of 2.8 V W at 2.4 GHz and 1.1 V W at 49.4 GHz.
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http://dx.doi.org/10.1039/c7nr02793aDOI Listing
August 2017