Publications by authors named "Manoj Kumar Mohanta"

2 Publications

  • Page 1 of 1

Phosphorus nitride nano-dots as a versatile and metal-free support for efficient photoelectrochemical water oxidation.

Chem Commun (Camb) 2021 Jun;57(50):6157-6160

Department of Chemistry, Indian Institute of Technology Guwahati, Guwahati, Assam 781039, India.

Phosphorus nitride dots (PNDs) are employed as a metal-free and versatile support over a range of metal oxide-based photoanodes for efficient photoelectrochemical (PEC) water oxidation. PNDs have the ability to form various heterojunctions by virtue of their favorable band positions for enhanced charge separation leading to improved photocurrent densities.
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http://dx.doi.org/10.1039/d1cc01030aDOI Listing
June 2021

Tuning the Electronic Structure of Monoclinic Tungsten Oxide Nanoblocks by Indium Doping for Boosted Photoelectrochemical Performance.

Chem Asian J 2020 Nov 19;15(22):3886-3896. Epub 2020 Oct 19.

Department of Chemistry, Indian Institute of Technology Guwahati, Assam, 781039, India.

Photoelectrochemical (PEC) water oxidation, a desirable strategy to meet future energy demands, has several bottle-necks to resolve. One of the prominent issues is the availability of charge carriers at the surface reaction site to promote water oxidation. Of the several approaches, metal dopants to enhance the carrier density of the semiconductors, is an important one. In this work, we have studied the effect of In-doping on monoclinic WO nanoblocks, growing vertically over fluorine-doped tin oxide (FTO) without the aid of any seed layer. X-ray photoelectron spectroscopy (XPS) data reveals that In ions are partially occupying the W ions in In-doped WO photoanode. In ions are offering better performance by adding additional charge carriers for amplifying the expression of the number of carriers. The maximum current density value of 2.18 mA/cm has been provided by the optimized In-doped WO photoanode with 3 wt% indium doping at 1.23 V vs. RHE, which is ∼3 times higher than that of undoped monoclinic WO photoanode. Mott-Schottky (MS) analysis reveals charge carrier density (N ) for In-doped WO photoanode has been enhanced by a factor of 3. An average Faradic yield of ∼90 percent has been achieved which can serve as a model system using In as a dopant for an inexpensive and attractive method for enhanced WO based PEC water oxidation.
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http://dx.doi.org/10.1002/asia.202000787DOI Listing
November 2020
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