Jinseong Heo

Jinseong Heo

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Jinseong Heo

Jinseong Heo

Publications by authors named "Jinseong Heo"

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18Publications

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Ultrahigh Gauge Factor in Graphene/MoS Heterojunction Field Effect Transistor with Variable Schottky Barrier.

ACS Nano 2019 Jul 26;13(7):8392-8400. Epub 2019 Jun 26.

Department of Electrical and Computer Engineering , Sungkyunkwan University , Suwon 16419 , Republic of Korea.

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http://dx.doi.org/10.1021/acsnano.9b03993DOI Listing
July 2019

Direct growth of doping controlled monolayer WSe by selenium-phosphorus substitution.

Nanoscale 2018 Jun;10(24):11397-11402

Department of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.

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http://xlink.rsc.org/?DOI=C8NR03427C
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http://dx.doi.org/10.1039/c8nr03427cDOI Listing
June 2018

Mobility Engineering in Vertical Field Effect Transistors Based on Van der Waals Heterostructures.

Adv Mater 2018 Mar 15;30(9). Epub 2018 Jan 15.

Department of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon-si, 16419, Republic of Korea.

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http://dx.doi.org/10.1002/adma.201704435DOI Listing
March 2018

Characterization of Edge Contact: Atomically Resolved Semiconductor-Metal Lateral Boundary in MoS.

Adv Mater 2017 Nov 18;29(41). Epub 2017 Sep 18.

Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon, 16678, South Korea.

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http://dx.doi.org/10.1002/adma.201702931DOI Listing
November 2017

Tuning Carrier Tunneling in van der Waals Heterostructures for Ultrahigh Detectivity.

Nano Lett 2017 01 20;17(1):453-459. Epub 2016 Dec 20.

Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Korea.

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http://pubs.acs.org/doi/10.1021/acs.nanolett.6b04449
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http://dx.doi.org/10.1021/acs.nanolett.6b04449DOI Listing
January 2017

Reconfigurable van der Waals Heterostructured Devices with Metal-Insulator Transition.

Nano Lett 2016 11 5;16(11):6746-6754. Epub 2016 Oct 5.

Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon-si 16678, Korea.

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http://dx.doi.org/10.1021/acs.nanolett.6b02199DOI Listing
November 2016

Tension assisted metal transfer of graphene for Schottky diodes onto wafer scale substrates.

Nanotechnology 2016 Feb 20;27(7):075303. Epub 2016 Jan 20.

Samsung Advanced Institute of Technology, Yongin 446-577, Korea. School of Mechanical Engineering, Yonsei University, Seoul 120-749, Korea.

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http://dx.doi.org/10.1088/0957-4484/27/7/075303DOI Listing
February 2016

Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors.

Sci Rep 2016 Feb 10;6:20907. Epub 2016 Feb 10.

Device Laboratory, Device and System Research Center, Samsung Advanced Institute of Technology, Suwon 443-803, Korea.

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http://dx.doi.org/10.1038/srep20907DOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4748263PMC
February 2016

Graphene and thin-film semiconductor heterojunction transistors integrated on wafer scale for low-power electronics.

Nano Lett 2013 25;13(12):5967-71. Epub 2013 Nov 25.

Samsung Advanced Institute of Technology, Samsung Electronics Co. , 97 Samsung2-ro, Giheung-gu, Yongin-si, Gyeonggi-do 446-712, Korea.

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http://pubs.acs.org/doi/10.1021/nl403142v
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http://dx.doi.org/10.1021/nl403142vDOI Listing
September 2014

Graphene for true Ohmic contact at metal-semiconductor junctions.

Nano Lett 2013 Sep 30;13(9):4001-5. Epub 2013 Aug 30.

Samsung Advanced Institute of Technology, Samsung Electronics Co. , Yongin-si 446-712, Korea.

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http://dx.doi.org/10.1021/nl402367yDOI Listing
September 2013

Electrical control of kinesin-microtubule motility using a transparent functionalized-graphene substrate.

Nanotechnology 2013 May 17;24(19):195102. Epub 2013 Apr 17.

Department of Biophysics and Chemical Biology, Seoul National University, Seoul, Korea.

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http://dx.doi.org/10.1088/0957-4484/24/19/195102DOI Listing
May 2013

Graphene barristor, a triode device with a gate-controlled Schottky barrier.

Science 2012 Jun 17;336(6085):1140-3. Epub 2012 May 17.

Graphene Research Center, Samsung Advanced Institute of Technology, Yongin 446-712, Korea.

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http://dx.doi.org/10.1126/science.1220527DOI Listing
June 2012

Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask.

Nanotechnology 2011 Jul 14;22(29):295201. Epub 2011 Jun 14.

School of Material Science and Engineering, Gwangju Institute of Science and Technology, Buk-gu, Gwangju, Korea.

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http://dx.doi.org/10.1088/0957-4484/22/29/295201DOI Listing
July 2011

Band gap opening by two-dimensional manifestation of peierls instability in graphene.

ACS Nano 2011 Apr 15;5(4):2964-9. Epub 2011 Mar 15.

Samsung Advanced Institute of Technology, Yongin 446-712, Korea.

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http://dx.doi.org/10.1021/nn1035894DOI Listing
April 2011

Passivation of metal surface states: microscopic origin for uniform monolayer graphene by low temperature chemical vapor deposition.

ACS Nano 2011 Mar 10;5(3):1915-20. Epub 2011 Feb 10.

Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea.

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http://dx.doi.org/10.1021/nn102916cDOI Listing
March 2011

Sagnac interference in carbon nanotube loops.

Phys Rev Lett 2007 Jun 15;98(24):246803. Epub 2007 Jun 15.

Department of Physics, California Institute of Technology, MC 114-36, Pasadena, California 91125, USA.

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https://link.aps.org/doi/10.1103/PhysRevLett.98.246803
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http://dx.doi.org/10.1103/PhysRevLett.98.246803DOI Listing
June 2007

Local electronic structure of single-walled carbon nanotubes from electrostatic force microscopy.

Nano Lett 2005 May;5(5):853-7

Department of Applied Physics, California Institute of Technology, M/C 128-95, Pasadena, California 91125, USA.

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http://dx.doi.org/10.1021/nl0501765DOI Listing
May 2005