Publications by authors named "Jinran Yu"

9 Publications

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Decrease in abundance of bacteria of the genus in gut microbiota may be related to pre-eclampsia progression in women from East China.

Food Nutr Res 2021 28;65. Epub 2021 Jun 28.

Department of Obstetrics and Gynecology, Changzhou Maternity and Child Health Care Hospital Affiliated to Nanjing Medical University, Changzhou, China.

Background: Pre-eclampsia (PE) can result in severe damage to maternal and fetal health. It has been reported that gut microbiota (GM) had important roles in regulating the metabolic and inflammatory responses of the mother. However, investigations on GM in PE are rare.

Objective: The objective of the present study was to investigate the changes of GM in PE and how to alter the GM composition in PE by dietary or dietary supplements.

Design: We analyzed the composition changes in GM as well as the relationship between bacteria of different genera and clinical indices by amplifying the V4 region of the 16S ribosomal RNA gene in 12 PE patients and eight healthy pregnant women in East China.

Results: In the PE group, the Observed Species Index was lower than that in the control group, indicating that the α-diversity of the microbiome in the PE group decreased. At phylum, family, and genus levels, the relative abundance of different bacteria in PE patients displayed substantial differences to those from healthy women. We noted a decreased abundance of bacteria of the phylum Actinobacteria ( = 0.042), decreased abundance of bacteria of the family Bifidobacteriaceae ( = 0.039), increased abundance of bacteria of the genus ( = 0.026) and ( = 0.048), and decreased abundance of bacteria of the genus ( = 0.038) Among three enriched genera, bacteria of the genus showed a negative correlation with the systolic blood pressure (SBP), diastolic blood pressure (DBP), and dyslipidemia, which involved glucose metabolism, lipid metabolism, and the oxidative-phosphorylation pathway. The increased abundance of bacteria of the genera and was positively correlated with obesity and dyslipidemia, which involved lipid metabolism, glycosyltransferases, biotin metabolism, and the oxidative-phosphorylation pathways. Moreover, women in the PE group ate more than women in the control group, so fetuses were more prone to overnutrition in the PE group.

Conclusion: There is a potential for GM dysbiosis in PE patients, and they could be prone to suffer from metabolic syndrome. We speculate that alterations in the abundance of bacteria of certain genera (e.g. increased abundance of and , and decreased abundance of ) were associated with PE development to some degree. Our data could help to monitor the health of pregnant women and may be helpful for preventing and assisting treatment of PE by increasing dietary fiber or probiotics supplement.
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http://dx.doi.org/10.29219/fnr.v65.5781DOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8254465PMC
June 2021

Fiber-Shaped Triboiontronic Electrochemical Transistor.

Research (Wash D C) 2021 26;2021:9840918. Epub 2021 Apr 26.

Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China.

Contact electrification-activated triboelectric potential offers an efficient route to tuning the transport properties in semiconductor devices through electrolyte dielectrics, i.e., triboiontronics. Organic electrochemical transistors (OECTs) make more effective use of ion injection in the electrolyte dielectrics by changing the doping state of the semiconductor channel. However, the mainstream flexible/wearable electronics and OECT-based devices are usually modulated by electrical signals and constructed in conventional geometry, which lack direct and efficient interaction between the external environment and functional electronic devices. Here, we demonstrate a fiber-shaped triboiontronic electrochemical transistor with good electrical performances, including a current on/off ratio as high as ≈1286 with off-current at ~nA level, the average threshold displacements ( ) of 0.3 mm, the subthreshold swing corresponding to displacement (SS) at 1.6 mm/dec, and excellent flexibility and durability. The proposed triboiontronic electrochemical transistor has great potential to be used in flexible, functional, and smart self-powered electronic textile.
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http://dx.doi.org/10.34133/2021/9840918DOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8098052PMC
April 2021

Bioinspired mechano-photonic artificial synapse based on graphene/MoS heterostructure.

Sci Adv 2021 Mar 17;7(12). Epub 2021 Mar 17.

Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, P. R. China.

Developing multifunctional and diversified artificial neural systems to integrate multimodal plasticity, memory, and supervised learning functions is an important task toward the emulation of neuromorphic computation. Here, we present a bioinspired mechano-photonic artificial synapse with synergistic mechanical and optical plasticity. The artificial synapse is composed of an optoelectronic transistor based on graphene/MoS heterostructure and an integrated triboelectric nanogenerator. By controlling the charge transfer/exchange in the heterostructure with triboelectric potential, the optoelectronic synaptic behaviors can be readily modulated, including postsynaptic photocurrents, persistent photoconductivity, and photosensitivity. The photonic synaptic plasticity is elaborately investigated under the synergistic effect of mechanical displacement and the light pulses embodying different spatiotemporal information. Furthermore, artificial neural networks are simulated to demonstrate the improved image recognition accuracy up to 92% assisted with mechanical plasticization. The mechano-photonic artificial synapse is highly promising for implementing mixed-modal interaction, emulating complex biological nervous system, and promoting the development of interactive artificial intelligence.
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http://dx.doi.org/10.1126/sciadv.abd9117DOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7968845PMC
March 2021

Contact-electrification-activated artificial afferents at femtojoule energy.

Nat Commun 2021 03 11;12(1):1581. Epub 2021 Mar 11.

Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, China.

Low power electronics endowed with artificial intelligence and biological afferent characters are beneficial to neuromorphic sensory network. Highly distributed synaptic sensory neurons are more readily driven by portable, distributed, and ubiquitous power sources. Here, we report a contact-electrification-activated artificial afferent at femtojoule energy. Upon the contact-electrification effect, the induced triboelectric signals activate the ion-gel-gated MoS postsynaptic transistor, endowing the artificial afferent with the adaptive capacity to carry out spatiotemporal recognition/sensation on external stimuli (e.g., displacements, pressures and touch patterns). The decay time of the synaptic device is in the range of sensory memory stage. The energy dissipation of the artificial afferents is significantly reduced to 11.9 fJ per spike. Furthermore, the artificial afferents are demonstrated to be capable of recognizing the spatiotemporal information of touch patterns. This work is of great significance for the construction of next-generation neuromorphic sensory network, self-powered biomimetic electronics and intelligent interactive equipment.
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http://dx.doi.org/10.1038/s41467-021-21890-1DOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7952391PMC
March 2021

Atomic threshold-switching enabled MoS transistors towards ultralow-power electronics.

Nat Commun 2020 Dec 4;11(1):6207. Epub 2020 Dec 4.

Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, 100084, Beijing, China.

Power dissipation is a fundamental issue for future chip-based electronics. As promising channel materials, two-dimensional semiconductors show excellent capabilities of scaling dimensions and reducing off-state currents. However, field-effect transistors based on two-dimensional materials are still confronted with the fundamental thermionic limitation of the subthreshold swing of 60 mV decade at room temperature. Here, we present an atomic threshold-switching field-effect transistor constructed by integrating a metal filamentary threshold switch with a two-dimensional MoS channel, and obtain abrupt steepness in the turn-on characteristics and 4.5 mV decade subthreshold swing (over five decades). This is achieved by using the negative differential resistance effect from the threshold switch to induce an internal voltage amplification across the MoS channel. Notably, in such devices, the simultaneous achievement of efficient electrostatics, very small sub-thermionic subthreshold swings, and ultralow leakage currents, would be highly desirable for next-generation energy-efficient integrated circuits and ultralow-power applications.
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http://dx.doi.org/10.1038/s41467-020-20051-0DOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7719160PMC
December 2020

Dietary Vitamin E Intake Was Inversely Associated with Hyperuricemia in US Adults: NHANES 2009-2014.

Ann Nutr Metab 2020 21;76(5):354-360. Epub 2020 Sep 21.

Department of Nutrition and Food Hygiene, School of Public Health, Qingdao University, Qingdao, China,

Introduction: Current evidence on the association between dietary vitamin E intake and hyperuricemia risk is limited and conflicting.

Objective: The aim of the study was to assess the association of dietary vitamin E intake with hyperuricemia in US adults.

Methods: We conducted a cross-sectional study using data from the National Health and Nutrition Examination Survey, 2009-2014. Dietary vitamin E intake was evaluated through two 24-h dietary recall interviews. Logistic regression and restricted cubic spline models were used to examine the association between dietary vitamin E intake and hyperuricemia.

Results: Overall, 12,869 participants were included. The prevalence of hyperuricemia was 19.35%. After adjustment for age, gender, BMI, race, educational level, smoking status, alcohol consumption, physical activity, total daily energy intake, total cholesterol, protein intake, glomerular filtration rate, serum Cr, use of uric acid drugs, and drug abuse, the odds ratio (95% confidence interval) of hyperuricemia for the highest tertile of dietary vitamin E intake was 0.77 (0.63-0.96) compared with that of the lowest tertile. In men, dietary vitamin E intake and hyperuricemia were negatively correlated. In stratified analyses by age (20-39, 40-59, and ≥60 years), dietary vitamin E intake was inversely associated with hyperuricemia only among participants aged ≥60 years. Dose-response analyses showed that dietary vitamin E intake was inversely associated with hyperuricemia in a nonlinear manner.

Conclusion: Dietary vitamin E intake was negatively correlated with hyperuricemia in US adults, especially among males and participants aged ≥60 years.
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http://dx.doi.org/10.1159/000509628DOI Listing
September 2021

Versatile Triboiontronic Transistor Proton Conductor.

ACS Nano 2020 Jul 25;14(7):8668-8677. Epub 2020 Jun 25.

Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China.

Iontronics are effective in modulating electrical properties through the electric double layers (EDLs) assisted with ionic migration/arrangement, which are highly promising for unconventional electronics, ionic sensory devices, and flexible interactive interface. Proton conductors with the smallest and most abundant protons (H) can realize a faster migration/polarization under electric field to form the EDL with higher capacitance. Here, a versatile triboiontronic MoS transistor proton conductor by sophisticated combination of triboelectric modulation and protons migration has been demonstrated. This device utilizes triboelectric potential originated from mechanical displacement to modulate the electrical properties of transistors protons migration/accumulation. It shows superior electrical properties, including high current on/off ratio over 10, low cutoff current (∼0.04 pA), and steep switching properties (89 μm/dec). Pioneering noise tests are conducted to the tribotronic devices to exclude the possible noise interference introduced by mechanical displacement. The versatile triboiontronic MoS transistor proton conductor has been utilized for mechanical behavior derived logic devices and an artificial sensory neuron system. This work represents the reliable and effective triboelectric potential modulation on electronic transportation through protonic dielectrics, which is highly desired for theoretical study of tribotronic gating, active mechanosensation, self-powered electronic skin, artificial intelligence, .
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http://dx.doi.org/10.1021/acsnano.0c03030DOI Listing
July 2020

Ion Gel Capacitively Coupled Tribotronic Gating for Multiparameter Distance Sensing.

ACS Nano 2020 Mar 20;14(3):3461-3468. Epub 2020 Feb 20.

Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China.

Developing sophisticated device architectures is of great significance to go beyond Moore's law with versatility toward human-machine interaction and artificial intelligence. Tribotronics/tribo-iontronics offer a direct way to controlling the transport properties of semiconductor devices by mechanical actions, which fundamentally relies on how to enhance the tribotronic gating effect through device engineering. Here, we propose a universal method to enhance the tribotronic properties through electric double layer (EDL) capacitive coupling. By preparing an ion gel layer on top of tribotronic graphene transistor, we demonstrate a dual-mode field effect transistor (, a tribotronic transistor with capacitively coupled ion gel and an ion-gel-gated graphene transistor with a second tribotronic gate). The resulted tribotronic gating performances are greatly improved by twice for the on-state current and four times for the on/off ratio (the first mode). It can also be utilized as a multiparameter distance sensor with drain current increased by ∼600 μA and threshold voltage shifted by ∼0.8 V under a mechanical displacement of 0.25 mm (the second mode). The proposed methodology of EDL capacitive coupling offers a facile and efficient way to designing more sophisticated tribotronic devices with superior performance and multifunctional sensations.
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http://dx.doi.org/10.1021/acsnano.9b09549DOI Listing
March 2020

Triboiontronic Transistor of MoS.

Adv Mater 2019 Feb 27;31(7):e1806905. Epub 2018 Dec 27.

Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China.

Electric double layers (EDLs) formed in electrolyte-gated field-effect transistors (FETs) induce an extremely large local electric field that gives a highly efficient charge carrier control in the semiconductor channel. To achieve highly efficient triboelectric potential gating on the FET and explore diversified applications of electric double layer FETs (EDL-FETs), a triboiontronic transistor is proposed to bridge triboelectric potential modulation and ion-controlled semiconductor devices. Utilizing the triboelectric potential instead of applying an external gate voltage, the triboiontronic MoS transistor is efficiently operated owing to the formation of EDLs in the ion-gel dielectric layer. The operation mechanism of the triboiontronic transistor is proposed, and high current on/off ratio over 10 , low threshold value (75 μm), and steep switching properties (20 µm dec ) are achieved. A triboiontronic logic inverter with desirable gain (8.3 V mm ), low power consumption, and high stability is also demonstrated. This work presents a low-power-consuming, active, and a general approach to efficiently modulate semiconductor devices through mechanical instructions, which has great potential in human-machine interaction, electronic skin, and intelligent wearable devices. The proposed triboiontronics utilize ion migration and arrangement triggered by mechanical stimuli to control electronic properties, which are ready to deliver new interdisciplinary research directions.
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http://dx.doi.org/10.1002/adma.201806905DOI Listing
February 2019
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