Publications by authors named "Isabelle Gelard"

2 Publications

  • Page 1 of 1

Stability of high temperature chemical vapor deposited silicon based structures on metals for solar conversion.

J Nanosci Nanotechnol 2011 Sep;11(9):8318-22

SIMaP Grenoble INP UJF, CNRS, 38402 Saint Martin d'Hères, France.

Highly crystallized silicon layers were grown on metal sheets at high temperature (950 degrees C) by thermal CVD from silane. An intermediate buffer layer was mandatory to prevent interdiffusion and silicide formation but also to compensate lattice parameters and thermal expansion coefficients mismatches between metal and silicon and ideally transfer some crystalline properties (grain size, texture) from the substrate to the silicon layer. After a thermodynamic study, aluminum nitride or titanium nitride diffusion barrier layers were selected and processed by CVD. The structure and the interfaces stabilities of these silicon/nitride/metal stacks were studied by field effect gun scanning and transmission electron microscopy, X-ray diffraction, Raman and energy dispersive X-ray spectroscopy. As a result, TiN deposited by CVD appears to be an efficient material as a buffer layer between steel and silicon.
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http://dx.doi.org/10.1166/jnn.2011.5077DOI Listing
September 2011

Structure and defect characterization of multiferroic ReMnO(3) films and multilayers by TEM.

Nanotechnology 2010 Feb 18;21(7):75705. Epub 2010 Jan 18.

Electron Microscopy for Materials Research (EMAT), University of Antwerp, Groenenborgerlaan 171, B2020 Antwerpen, Belgium.

Epitaxial rare earth manganite thin films (ReMnO(3); Re = Tb, Ho, Er, and Y) and multilayers were grown by liquid injection metal organic chemical vapor deposition (MOCVD) on YSZ(111) and the same systems were grown c-oriented on Pt(111) buffered Si substrates. They have been structurally investigated by electron diffraction (ED) and high resolution transmission electron microscopy (HRTEM). Nanodomains of secondary orientation are observed in the hexagonal YMnO(3) films. They are related to a YSZ(111) and Pt(111) misorientation. The epitaxial film thickness has an influence on the defect formation. TbO(2) and Er(2)O(3) inclusions are observed in the TbMnO(3) and ErMnO(3) films respectively. The structure and orientation of these inclusions are correlated to the resembling symmetry and structure of film and substrate. The type of defect formed in the YMnO(3)/HoMnO(3) and YMnO(3)/ErMnO(3) multilayers is also influenced by the type of substrate they are grown on. In our work, atomic growth models for the interface between the film/substrate are proposed and verified by comparison with observed and computer simulated images.
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http://dx.doi.org/10.1088/0957-4484/21/7/075705DOI Listing
February 2010