Publications by authors named "Gennady N Panin"

10 Publications

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Molybdenum Disulfide Nanosheet/Quantum Dot Dynamic Memristive Structure Driven by Photoinduced Phase Transition.

Small 2019 Nov 20;15(45):e1903809. Epub 2019 Sep 20.

Nano Information Technology Academy, Quantum-Functional Semiconductor Research Center, Department of Physics, Dongguk University, 3-26 Pildong, Jung-Gu, Seoul, 04620, Republic of Korea.

MoS 2D nanosheets (NS) with intercalated 0D quantum dots (QDs) represent promising structures for creating low-dimensional (LD) resistive memory devices. Nonvolatile memristors based 2D materials demonstrate low power consumption and ultrahigh density. Here, the observation of a photoinduced phase transition in the 2D NS/0D QDs MoS structure providing dynamic resistive memory is reported. The resistive switching of the MoS NS/QD structure is observed in an electric field and can be controlled through local QD excitations. Photoexcitation of the LD structure at different laser power densities leads to a reversible MoS 2H-1T phase transition and demonstrates the potential of the LD structure for implementing a new dynamic ultrafast photoresistive memory. The dynamic LD photomemristive structure is attractive for real-time pattern recognition and photoconfiguration of artificial neural networks in a wide spectral range of sensitivity provided by QDs.
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http://dx.doi.org/10.1002/smll.201903809DOI Listing
November 2019

The effect of atmospheric doping on pressure-dependent Raman scattering in supported graphene.

Beilstein J Nanotechnol 2018 22;9:704-710. Epub 2018 Feb 22.

Department of Physics, Quantum-Functional Semiconductor Research Center, Nano Information Technology Academy, Dongguk University, 3-26 Pildong, Junggu, 100-715, Seoul, Korea.

Atmospheric doping of supported graphene was investigated by Raman scattering under different pressures. Various Raman spectra parameters were found to depend on the pressure and the substrate material. The results are interpreted in terms of atmospheric adsorption leading to a change in graphene charge carrier density and the effect of the substrate on the electronic and phonon properties of graphene. It was found that adsorption of molecules from the atmosphere onto graphene doped with nitrogen (electron doping) compensates for the electron charge. Furthermore, the atmosphere-induced doping drastically decreases the spatial heterogeneity of charge carriers in graphene doped with nitrogen, while the opposite effect was observed for undoped samples. The results of this study should be taken into account for the development of sensors and nanoelectronic devices based on graphene.
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http://dx.doi.org/10.3762/bjnano.9.65DOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC5827772PMC
February 2018

Influence of the Quantum Well Structure and Growth Temperature on a Five-Layer InGaMnAs Quantum Well with an InGaAs Buffer Layer.

J Nanosci Nanotechnol 2018 Jun;18(6):4355-4359

Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Chernogolovka 142432, Russian Federation.

The influence of quantum well structure and growth temperature on a synthesized multilayer system composed of a five-layer InMnGaAs quantum well with an InGaAs buffer layer grown on semi-insulating (100)-oriented substrates prepared by low temperature molecular beam epitaxy was studied. The magnetization measurements using a superconducting quantum interference device indicated the existence of ferromagnetism with a Curie temperature above room temperature in the five-layer InGaMnAs quantum well structure with an InGaAs buffer layer in a GaAs matrix. X-ray diffraction and secondary ion mass spectroscopy measurements confirmed the second phase formation of ferromagnetic GaMn clusters. The ferromagnetism that exists in the five-layer of the InMnGaAs quantum well with the InGaAs buffer layer results from a superposition of the ferromagnetism of the low temperature region from the substitutional Mn ions into Ga sites or interstitial Mn ions as well as the presence of manganese ions dopant clusters such as GaMn clusters.
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http://dx.doi.org/10.1166/jnn.2018.15008DOI Listing
June 2018

Novel Green Luminescent and Phosphorescent Material: Semiconductive Nanoporous ZnMnO with Photon Confinement.

ACS Appl Mater Interfaces 2017 Jun 8;9(24):20630-20636. Epub 2017 Jun 8.

Quantum-Functional Semiconductor Research Center, Dongguk University-Seoul , Seoul 04623, Korea.

A novel green luminescent and phosphorescent material of semiconductive nanoporous ZnMnO was synthesized by the thermal nucleation of nanopores in the 20-period ZnMnO/ZnMnO multilayer structure. Nanoporous ZnMnO showed an n-type semiconducting property and exhibited an extremely strong green light emission in its luminescence and phosphorescence characteristics. This arises from the formation of the localized energy level (i.e., green emission band) within the energy band gap and the confinement of photons. The results suggest nanoporous ZnMnO to have a great potential for the new type of semiconducting green phosphors and semiconductor light-emitting diodes with lower thresholds, producing an efficient light emission. In-depth analyses on the structural, electrical, and optical properties are thoroughly examined, and the formation mechanism of nanoporous ZnMnO and the origin of the strong green light emission are discussed.
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http://dx.doi.org/10.1021/acsami.7b01557DOI Listing
June 2017

Formation of self-assembled nanoscale graphene/graphene oxide photomemristive heterojunctions using photocatalytic oxidation.

Nanotechnology 2017 May 8;28(20):204005. Epub 2017 Mar 8.

Department of Chemistry, Moscow State University, Leninskie Gory, 1, b.3, 119991, Moscow, Russia.

Photocatalytic oxidation of graphene with ZnO nanoparticles was found to create self-assembled graphene oxide/graphene (G/GO) photosensitive heterostructures, which can be used as memristors. Oxygen groups released during photodecomposition of water molecules on the nanoparticles under ultraviolet light, oxidized graphene, locally forming the G/GO heterojunctions with ultra-high density. The G/GO nanostructures have non-linear current-voltage characteristics and switch the resistance in the dark and under white light, providing four resistive states at room temperature. Photocatalytic oxidation of graphene with ZnO nanoparticles is proposed as an effective method for creating two-dimensional memristors with a photoresistive switching for ultra-high capacity non-volatile memory.
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http://dx.doi.org/10.1088/1361-6528/aa655cDOI Listing
May 2017

Tunable UV-visible absorption of SnS layered quantum dots produced by liquid phase exfoliation.

Nanoscale 2017 Feb;9(5):1820-1826

Quantum-Functional Semiconductor Research Center, Nano Information Technology Academy, Dongguk University, Seoul, 100-715, Republic of Korea.

4H-SnS layered crystals synthesized by a hydrothermal method were used to obtain via liquid phase exfoliation quantum dots (QDs), consisting of a single layer (SLQDs) or multiple layers (MLQDs). Systematic downshift of the peaks in the Raman spectra of crystals with a decrease in size was observed. The bandgap of layered QDs, estimated by UV-visible absorption spectroscopy and the tunneling current measurements using graphene probes, increases from 2.25 eV to 3.50 eV with decreasing size. 2-4 nm SLQDs, which are transparent in the visible region, show selective absorption and photosensitivity at wavelengths in the ultraviolet region of the spectrum while larger MLQDs (5-90 nm) exhibit a broad band absorption in the visible spectral region and the photoresponse under white light. The results show that the layered quantum dots obtained by liquid phase exfoliation exhibit well-controlled and regulated bandgap absorption in a wide tunable wavelength range. These novel layered quantum dots prepared using an inexpensive method of exfoliation and deposition from solution onto various substrates at room temperature can be used to create highly efficient visible-blind ultraviolet photodetectors and multiple bandgap solar cells.
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http://dx.doi.org/10.1039/c6nr09022bDOI Listing
February 2017

Multicolor Emission from Poly(p-Phenylene)/Nanoporous ZnMnO Organic-Inorganic Hybrid Light-Emitting Diode.

ACS Appl Mater Interfaces 2016 Dec 15;8(51):35435-35439. Epub 2016 Dec 15.

Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences , 142432 Chernogolovka, Russia.

The voltage-tunable multicolor emission was realized in a poly(p-phenylene)/nanoporous ZnMnO organic-inorganic hybrid light-emitting diode. Red, green, and blue (RGB) colors sequentially appeared with increasing magnitude of the bias voltage (i.e., R ā†’ RG ā†’ RGB with Vā†‘). At a higher voltage (>2.4 V), eventually, the device emitted the visible light with a mixture of colors including RGB. These unique features may move us a step closer to the application of organic-inorganic hybrid solid-state lighting devices for the full-color display and/or the electrical-to-optical data converter for multivalue electronic signal processes. In-depth analyses on electrical and optical properties are presented, and voltage-controllable multicolor-emission mechanisms are discussed.
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http://dx.doi.org/10.1021/acsami.6b11539DOI Listing
December 2016

MoS2 memristor with photoresistive switching.

Sci Rep 2016 08 5;6:31224. Epub 2016 Aug 5.

Department of Physics, Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Republic of Korea.

A MoS2 nanosphere memristor with lateral gold electrodes was found to show photoresistive switching. The new device can be controlled by the polarization of nanospheres, which causes resistance switching in an electric field in the dark or under white light illumination. The polarization charge allows to change the switching voltage of the photomemristor, providing its multi-level operation. The device, polarized at a voltage 6ā€‰V, switches abruptly from a high resistance state (HRSL6) to a low resistance state (LRSL6) with the On/Off resistance ratio of about 10 under white light and smooth in the dark. Analysis of device conductivity in different resistive states indicates that its resistive state could be changed by the modulation of the charge in an electric field in the dark or under light, resulting in the formation/disruption of filaments with high conductivity. A MoS2 photomemristor has great potential as a multifunctional device designed by using cost-effective fabrication techniques.
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http://dx.doi.org/10.1038/srep31224DOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC4974562PMC
August 2016

Luminescent properties of three structures built from 3-cyano-4-dicyanomethylene-5-oxo-4,5-dihydro-1H-pyrrol-2-olate and cadmium.

Acta Crystallogr C 2007 Dec 14;63(Pt 12):m541-7. Epub 2007 Nov 14.

Chemistry Department, Moscow State University, 119899 Moscow, Russian Federation.

Yellow-orange tetraaquabis(3-cyano-4-dicyanomethylene-5-oxo-4,5-dihydro-1H-pyrrol-2-olato-kappaN(3))cadmium(II) dihydrate, [Cd(C8HN4O2)2(H2O)4] x 2 H2O, (I), and yellow tetraaquabis(3-cyano-4-dicyanomethylene-5-oxo-4,5-dihydro-1H-pyrrol-2-olato-kappaN(3))cadmium(II) 1,4-dioxane solvate, [Cd(C8HN4O2)2(H2O)4] x C4H8O2, (II), contain centrosymmetric mononuclear Cd2+ coordination complex molecules in different conformations. Dark-red poly[[decaaquabis(mu(2)-3-cyano-4-dicyanomethylene-5-oxo-4,5-dihydro-1H-pyrrol-2-olato-kappa(2)N:N')bis(mu(2)-3-cyano-4-dicyanomethylene-1H-pyrrole-2,5-diolato-kappa(2)N:N')tricadmium] hemihydrate], [Cd3(C8HN4O2)2(C8N4O2)2(H2O)10] x 0.5 H2O, (III), has a polymeric two-dimensional structure, the building block of which includes two cadmium cations (one of them located on an inversion centre), and both singly and doubly charged anions. The cathodoluminescence spectra of the crystals are different and cover the wavelength range from UV to red, with emission peaks at 377 and 620 nm for (III), and at 583 and 580 nm for (I) and (II), respectively.
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http://dx.doi.org/10.1107/S0108270107045453DOI Listing
December 2007