Publications by authors named "Chaoming Liu"

10 Publications

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The elemental 2D materials beyond graphene potentially used as hazardous gas sensors for environmental protection.

J Hazard Mater 2021 Sep 9;423(Pt B):127148. Epub 2021 Sep 9.

Laboratory for Space Environment and Physical Sciences, Harbin Institute of Technology, 150001 Harbin, China.

The intrinsic and electronic properties of elemental two-dimensional (2D) materials beyond graphene are first introduced in this review. Then the studies concerning the application of gas sensing using these 2D materials are comprehensively reviewed. On the whole, the carbon-, nitrogen-, and sulfur-based gases could be effectively detected by using most of them. For the sensing of organic vapors, the borophene, phosphorene, and arsenene may perform it well. Moreover, the G-series nerve agents might be efficiently monitored by the bismuthene. So far, there is still challenge on the material preparation due to the instability of these 2D materials under atmosphere. The synthesis or growth of materials integrated with the technique of surface protection should be associated with the device fabrication to establish a complete process for particular application. This review provides a complete and methodical guideline for scientists to further research and develop the hazardous gas sensors of these 2D materials in order to achieve the purpose of environmental protection.
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http://dx.doi.org/10.1016/j.jhazmat.2021.127148DOI Listing
September 2021

Modulation of 1 MeV electron irradiation on ultraviolet response in MoSFET.

Nanotechnology 2021 Sep 2;32(47). Epub 2021 Sep 2.

Harbin Institute of Technology, Harbin, People's Republic of China.

The material, electrical and ultraviolet optoelectronic properties of few layers bottom molybdenum disulfide (MoS) field effect transistors (FETs) device was investigated before and after 1 MeV electron irradiation. Due to the participation of SiOin conduction, we discovered novel photoelectric properties and a relatively long photogenerated carrier lifetime (several tens of seconds). Electron irradiation causes lattice distortion, the decrease of carrier mobility, and the increase of interface state. It leads to the degradation of output characteristics, transfer characteristics and photocurrent of the MoSFET.
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http://dx.doi.org/10.1088/1361-6528/ac1d79DOI Listing
September 2021

Genistein-3'-sodium sulfonate Attenuates Neuroinflammation in Stroke Rats by Down-Regulating Microglial M1 Polarization through α7nAChR-NF-κB Signaling Pathway.

Int J Biol Sci 2021 8;17(4):1088-1100. Epub 2021 Mar 8.

Key Laboratory of Prevention and treatment of cardiovascular and cerebrovascular diseases of Ministry of Education, Gannan Medical University, Ganzhou 341000, China.

Microglial M1 depolarization mediated prolonged inflammation contributing to brain injury in ischemic stroke. Our previous study revealed that Genistein-3'-sodium sulfonate (GSS) exerted neuroprotective effects in ischemic stroke. This study aimed to explore whether GSS protected against brain injury in ischemic stroke by regulating microglial M1 depolarization and its underlying mechanisms. We established transient middle cerebral artery occlusion and reperfusion (tMCAO) model in rats and used lipopolysaccharide (LPS)-stimulated BV2 microglial cells as model. Our results showed that GSS treatment significantly reduced the brain infarcted volume and improved the neurological function in tMCAO rats. Meanwhile, GSS treatment also dramatically reduced microglia M1 depolarization and IL-1β level, reversed α7nAChR expression, and inhibited the activation of NF-κB signaling in the ischemic penumbra brain regions. These effects of GSS were further verified in LPS-induced M1 depolarization of BV2 cells. Furthermore, pretreatment of α7nAChR inhibitor (α-BTX) significantly restrained the neuroprotective effect of GSS treatment in tMCAO rats. α-BTX also blunted the regulating effects of GSS on neuroinflammation, M1 depolarization and NF-κB signaling activation. This study demonstrates that GSS protects against brain injury in ischemic stroke by reducing microglia M1 depolarization to suppress neuroinflammation in peri-infarcted brain regions through upregulating α7nAChR and thereby inhibition of NF-κB signaling. Our findings uncover a potential molecular mechanism for GSS treatment in ischemic stroke.
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http://dx.doi.org/10.7150/ijbs.56800DOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC8040300PMC
March 2021

Icaritin Alleviates Glutamate-Induced Neuronal Damage by Inactivating GluN2B-Containing NMDARs Through the ERK/DAPK1 Pathway.

Front Neurosci 2021 22;15:525615. Epub 2021 Feb 22.

Key Laboratory of Prevention and Treatment of Cardiovascular and Cerebrovascular Diseases of Ministry of Education, Gannan Medical University, Ganzhou, China.

Excitatory toxicity due to excessive glutamate release is considered the core pathophysiological mechanism of cerebral ischemia. It is primarily mediated by N-methyl-D-aspartate receptors (NMDARs) on neuronal membranes. Our previous studies have found that icaritin (ICT) exhibits neuroprotective effects against cerebral ischemia in rats, but the underlying mechanism is unclear. This study aims to investigate the protective effect of ICT on glutamate-induced neuronal injury and uncover its possible molecular mechanism. An excitatory toxicity injury model was created using rat primary cortical neurons treated with glutamate and glycine. The results showed that ICT has neuroprotective effects on glutamate-treated primary cortical neurons by increasing cell viability while reducing the rate of lactate dehydrogenase (LDH) release and reducing apoptosis. Remarkably, ICT rescued the changes in the ERK/DAPK1 signaling pathway after glutamate treatment by increasing the expression levels of p-ERK, p-DAPK1 and t-DAPK1. In addition, ICT also regulates NMDAR function during glutamate-induced injury by decreasing the expression level of the GluN2B subunit and enhancing the expression level of the GluN2A subunit. As cotreatment with the ERK-specific inhibitor U0126 and ICT abolishes the beneficial effects of ITC on the ERK/DAPK1 pathway, NMDAR subtypes and neuronal cell survival, ERK is recognized as a crucial mediator in the protective mechanism of ICT. In conclusion, our findings demonstrate that ICT has a neuroprotective effect on neuronal damage induced by glutamate, and its mechanism may be related to inactivating GluN2B-containing NMDAR through the ERK/DAPK1 pathway. This study provides a new clue for the prevention and treatment of clinical ischemic cerebrovascular diseases.
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http://dx.doi.org/10.3389/fnins.2021.525615DOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC7937872PMC
February 2021

Direct Synthesis of Large-Scale Multilayer TaSe on SiO/Si Using Ion Beam Technology.

ACS Omega 2019 Oct 8;4(17):17536-17541. Epub 2019 Oct 8.

Department of Physics, National Central University, 32001 Taoyuan, Taiwan, R. O. C.

The multilayer 1T-TaSe is successfully synthesized by annealing a Se-implanted Ta thin film on the SiO/Si substrate. Material analyses confirm the 1T (octahedral) structure and the quasi-2D nature of the prepared TaSe. Temperature-dependent resistivity reveals that the multilayer 1T-TaSe obtained by our method undergoes a commensurate charge-density wave (CCDW) transition at around 500 K. This synthesis process has been applied to synthesize MoSe and HfSe and expanded for synthesis of one more transition-metal dichalcogenide (TMD) material. In addition, the main issue of the process, that is, the excess metal capping on the TMD layers, is solved by the reduction of thickness of the as-deposited metal thin film in this work.
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http://dx.doi.org/10.1021/acsomega.9b02441DOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6812130PMC
October 2019

Electron radiation effects on the structural and electrical properties of MoS field effect transistors.

Nanotechnology 2019 11 29;30(48):485201. Epub 2019 Nov 29.

School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, People's Republic of China.

The effects of space radiation on the structural and electrical properties of MoS field effect transistors (FETs) were investigated. The 1 MeV electronically equivalent International Space Station (ISS) track was used to apply fluence equivalent to the orbital for 10 (1.0 × 10 cm) and 30 years (3.0 × 10 cm) using the AP8 and AE8 models. X-ray photoelectron spectroscopy (XPS), Raman and photoluminescence (PL) spectra were recorded before and after irradiation. Electron irradiation produced strong desulfurization effects in MoS FETs. The PL spectra before and after irradiation did not change significantly, while the [Formula: see text] and A Raman modes were red- and blue-shifted, respectively. The XPS results demonstrated a strong desulfurization effect of the electron beam on MoS. This reduction indicates a much higher amount of irradiation-induced S vacancies compared to Mo vacancies. The electrical characteristics of the device were measured before and after irradiation. The increase in the channel leakage current after irradiation was attributed to the oxide trapping positive charges. MoS FETs irradiated by the electron-beam demonstrated a decreased current. This phenomenon can be attributed to the combination of the states at the SiO/MoS interfaces and Coulomb scattering. Our study provides a deeper understanding of the influence of 1 MeV electron-beam irradiation on MoS-based nano-electronic devices for future space applications.
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http://dx.doi.org/10.1088/1361-6528/ab3ce2DOI Listing
November 2019

Modulation of electronic and optical properties by surface vacancies in low-dimensional β-GaO.

Phys Chem Chem Phys 2019 Jul;21(27):14745-14752

Research Center of Basic Space Science, Harbin Institute of Technology, 150001, Harbin, China.

Calculations using the Heyd-Scuseria-Ernzerhof screened hybrid functional reveal the detailed influence that surface vacancies have on the electronic and optical properties of low-dimensional (LD) β-Ga2O3. Vacancies manifest subtle changes to the electronic characteristics as oxygen states predominate the valence band at the surface. Dielectric functions at the surface are found to increase with vacancies and defects. A broad impact on optical properties, such as absorption coefficients, reflectivity, refractive indices, and electron loss, is seen with increased vacancy defects. Both visible and infrared regions show direct correlation with vacancies while there is a marked decrease in the deep ultraviolet (UV) region. These calculations on the β-Ga2O3 model system may guide the rational design of two-dimensional optical devices with minimized van der Waals forces.
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http://dx.doi.org/10.1039/c9cp02196eDOI Listing
July 2019

3'-Daidzein sulfonate sodium provides neuroprotection by promoting the expression of the α7 nicotinic acetylcholine receptor and suppressing inflammatory responses in a rat model of focal cerebral ischemia.

Am J Transl Res 2018 15;10(11):3455-3464. Epub 2018 Nov 15.

Gannan Medical University Ganzhou 341000, People's Republic of China.

In a previous study using a rat model of focal cerebral ischemia/reperfusion (I/R) injury, we found that 3'-Daidzein sulfonate sodium (DSS), a derivative of daidzein, exerts neuroprotective effects by alleviating brain edema and reducing levels of interleukin (IL)-6. The present study was designed to further examine the potential mechanisms of the neuroprotective properties of DSS in a rat model of cerebral I/R injury. We found that treatment with DSS ameliorated neurological deficit, infarct size, and cerebral water content in rats with cerebral I/R injury. Moreover, treatment with DSS significantly reduced the levels of IL-1β, IL-6, and tumor necrosis factor (TNF)-α in serum and in the ischemic penumbra. Additionally, DSS treatment increased the expression of nicotinic acetylcholine receptor alpha 7 (α7nAChR), and inhibited the expression of glial fibrillary acidic protein, phosphorylated p65 nuclear factor κB, and phosphorylated inhibitor of NF-κBα, suggesting that DSS provides neuroprotection by suppressing inflammatory responses after focal cerebral I/R injury. Notably, α-bungarotoxin, an antagonist of α7nAChR, reversed the neuroprotective effects of DSS after cerebral I/R injury, suggesting that inhibition of α7nAChR expression is sufficient for reversal of the neuroprotective effects of DSS. In conclusion, we found that DSS treatment provides neuroprotection by promoting α7nAChR expression in a rat model of focal cerebral ischemia, thus establishing α7nAChR as a potential therapeutic target in cerebral I/R injury.
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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6291707PMC
November 2018

Ultra-fast annealing manipulated spinodal nano-decomposition in Mn-implanted Ge.

Nanotechnology 2019 Feb 30;30(5):054001. Epub 2018 Nov 30.

Harbin Institute of Technology, School of Materials Science and Engineering, 150001, Harbin, People's Republic of China. Laboratory for Space Environment and Physical Science, Research Center of Basic Space Science, Harbin Institute of Technology, 150001, Harbin, People's Republic of China. Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden, Germany.

In the present work, millisecond-range flash lamp annealing is used to recrystallize Mn-implanted Ge. Through systematic investigations of structural and magnetic properties, we find that the flash lamp annealing produces a phase mixture consisting of spinodally decomposed Mn-rich ferromagnetic clusters within a paramagnetic-like matrix with randomly distributed Mn atoms. Increasing the annealing energy density from 46, via 50, to 56 J cm causes the segregation of Mn atoms into clusters, as proven by transmission electron microscopy analysis and quantitatively confirmed by magnetization measurements. According to x-ray absorption spectroscopy, the dilute Mn ions within Ge are in d electronic configuration. This Mn-doped Ge shows paramagnetism, as evidenced by the unsaturated magnetic-field-dependent x-ray magnetic circular dichroism signal. Our study reveals how spinodal decomposition occurs and influences the formation of ferromagnetic Mn-rich Ge-Mn nanoclusters.
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http://dx.doi.org/10.1088/1361-6528/aaefb1DOI Listing
February 2019

Interaction between hydrogen and gallium vacancies in β-GaO.

Sci Rep 2018 Jul 4;8(1):10142. Epub 2018 Jul 4.

School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China.

In this paper, the revised Heyd-Scuseria-Ernzerhof screened hybrid functional (HSE06) is used to investigate the interaction between hydrogen with different concentrations and gallium vacancies in β-GaO. The hydrogen can compensate a gallium vacancy by forming hydrogen-vacancy complex. A gallium vacancy can bind up to four hydrogen atoms, and formation energies decrease as the number of hydrogen atoms increases. Hydrogen prefers to bind with three coordinated oxygen. The bonding energy and annealing temperatures of complexes containing more than two hydrogen atoms are computed, and show relatively high stability. In addition, vacancy concentrations increase with the increasing vapor pressures. This paper can effectively explain the hydrogen impact in β-GaO.
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http://dx.doi.org/10.1038/s41598-018-28461-3DOI Listing
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC6031635PMC
July 2018
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